Cathodoluminescence and Depth-Profiling Cathodoluminescence Studies of Interface properties in MOCVD-Grown InGaN/GaN/Sapphire Structures: Role of GaN Buffer Layer

Publisher:
Elsevier Science
Publication Type:
Journal Article
Citation:
Applied Surface Science, 2001, 177 pp. 22 - 31
Issue Date:
2001-01
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