Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer

Publication Type:
Journal Article
Citation:
Applied Surface Science, 2001, 177 (1-2), pp. 22 - 31
Issue Date:
2001-06-01
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We report the results of room-temperature cathodoluminescence (CL) and of scanning CL and electron (SEM) microscopy of GaN/InGaN structure with a single InGaN quantum well on top. The structures were grown by MOCVD on sapphire with low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on structural and optical properties of GaN/sapphire interface in the structure is discussed. Our results show that inter-diffusion of Al from sapphire to the GaN buffer layer takes place. A gradual improvement of film quality with increasing distance from interface is demonstrated. © 2001 Elsevier Science B.V.
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