In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

Godlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S

In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

Godlewski, M Goldys, EM Phillips, MR

Böttcher, T Figge, S Hommel, D Czernecki, R Prystawko, P Leszczynski, M Perlin, P Grzegory, I Porowski, S

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Publication Type:: Journal Article
Citation:: Physica Status Solidi (A) Applied Research, 2004, 201 (2), pp. 207 - 211
Issue Date:: 2004-01-01

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Field	Value	Language
dc.contributor.author	Godlewski, M	en_US
dc.contributor.author	Goldys, EM	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Böttcher, T	en_US
dc.contributor.author	Figge, S	en_US
dc.contributor.author	Hommel, D	en_US
dc.contributor.author	Czernecki, R	en_US
dc.contributor.author	Prystawko, P	en_US
dc.contributor.author	Leszczynski, M	en_US
dc.contributor.author	Perlin, P	en_US
dc.contributor.author	Grzegory, I	en_US
dc.contributor.author	Porowski, S	en_US
dc.date.issued	2004-01-01	en_US
dc.identifier.citation	Physica Status Solidi (A) Applied Research, 2004, 201 (2), pp. 207 - 211	en_US
dc.identifier.issn	0031-8965	en_US
dc.identifier.uri	http://hdl.handle.net/10453/4269
dc.description.abstract	We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en_US
dc.relation.ispartof	Physica Status Solidi (A) Applied Research	en_US
dc.relation.isbasedon	10.1002/pssa.200303902	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	In-depth and in-plane profiling of light emission properties of InGaN-based laser diode	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	201	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	201	en_US

Abstract:

We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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http://hdl.handle.net/10453/4269