In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

Publication Type:
Journal Article
Citation:
Physica Status Solidi (A) Applied Research, 2004, 201 (2), pp. 207 - 211
Issue Date:
2004-01-01
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We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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