In-depth and in-plane profiling of light emission properties of InGaN-based laser diode
- Publication Type:
- Journal Article
- Physica Status Solidi (A) Applied Research, 2004, 201 (2), pp. 207 - 211
- Issue Date:
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in laser diode structure. We study light emission properties from laser structure and their relation to microstructure details. Large in-plane instabilities of light emission are also present for excitation densities, larger than the threshold densities for the stimulated emission, i.e., potential fluctuations are not fully screened in the active region of the laser even at large excitation densities. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Please use this identifier to cite or link to this item: