Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission

Publication Type:
Journal Article
Citation:
Acta Physica Polonica A, 2003, 103 (6), pp. 689 - 694
Issue Date:
2003-01-01
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Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
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