Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence

Publisher:
American Institute of Physics
Publication Type:
Journal article
Citation:
Pauc, N. et al. 2006 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence', Applied Physics Letters, vol. 89, no. 16, pp. 161905-1-161905-3.
Issue Date:
2006
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The authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1 kV they resolve individual threading dislocations on the sample surface at low temperature (5 K), which appear as correlated dark spots. Analysis of CL intensity profiles across individual dislocation cores provides a direct measurement of the exciton and minority carrier diffusion lengths. Using this approach at 5 K, an exciton diffusion length of 62?28 nm was found for GaN:Si (~3?1018 cm?3) compared with 81?20 nm for a nominally undoped n-type GaN (~1?1016 cm?3)
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