Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence

Pauc, N; Aimez, V; Drouin, D; Phillips, M

Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence

Pauc, N Aimez, V Drouin, D Phillips, M

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Publisher:: American Institute of Physics
Publication Type:: Journal Article
Citation:: Pauc, N. et al. 2006 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence', Applied Physics Letters, vol. 89, no. 16, pp. 161905-1-161905-3.
Issue Date:: 2006

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Field	Value	Language
dc.contributor.author	Pauc, N	en_US
dc.contributor.author	Aimez, V	en_US
dc.contributor.author	Drouin, D	en_US
dc.contributor.author	Phillips, M	en_US
dc.date.accessioned	2009-06-26T04:10:34Z
dc.date.available	2009-06-26T04:10:34Z
dc.date.issued	2006	en_US
dc.identifier	2006005010	en_US
dc.identifier.citation	Pauc, N. et al. 2006 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence', Applied Physics Letters, vol. 89, no. 16, pp. 161905-1-161905-3.	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.other	C1	en_US
dc.identifier.uri	http://hdl.handle.net/10453/486
dc.description.abstract	The authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1 kV they resolve individual threading dislocations on the sample surface at low temperature (5 K), which appear as correlated dark spots. Analysis of CL intensity profiles across individual dislocation cores provides a direct measurement of the exciton and minority carrier diffusion lengths. Using this approach at 5 K, an exciton diffusion length of 62?28 nm was found for GaN:Si (~3?1018 cm?3) compared with 81?20 nm for a nominally undoped n-type GaN (~1?1016 cm?3)	en_US
dc.publisher	American Institute of Physics	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.ispartof	Verified OK	en_US
dc.relation.isbasedon	https://aip.scitation.org/doi/10.1063/1.2357881	en_US
dc.rights	The following article has been submitted to/accepted by Applied Physics Letters. After it is published, it will be found at https://aip.scitation.org/doi/10.1063/1.2357881 .	en_US
dc.subject.classification	Condensed Matter Physics	en_US
dc.title	Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence	en_US
dc.type	Journal article
utslib.citation.volume	89	en_US
utslib.citation.number	16	en_US
utslib.location	New York, USA	en_US
utslib.citation.startpage	161905-1	en_US
utslib.citation.endpage	161905-3	en_US
utslib.identifier.org	INT	en_US
utslib.for	020400	en_US
utslib.percentage	100	en_US
utslib.copyright.status	closed_access

Abstract:

The authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1 kV they resolve individual threading dislocations on the sample surface at low temperature (5 K), which appear as correlated dark spots. Analysis of CL intensity profiles across individual dislocation cores provides a direct measurement of the exciton and minority carrier diffusion lengths. Using this approach at 5 K, an exciton diffusion length of 62?28 nm was found for GaN:Si (~3?1018 cm?3) compared with 81?20 nm for a nominally undoped n-type GaN (~1?1016 cm?3)

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