Scanning tunneling and cathodoluminescence spectroscopy of indium nitride

Publication Type:
Journal Article
Citation:
Journal of Crystal Growth, 2004, 269 (1), pp. 106 - 110
Issue Date:
2004-08-15
Full metadata record
Files in This Item:
Filename Description Size
Thumbnail2004001089.pdf955.84 kB
Adobe PDF
Indium nitride epilayers grown by metalorganic vapor-phase epitaxy have been studied by cathodoluminescence (CL) spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy (STS). A broad CL emission peak centered at 0.8eV was observed at 80K. This peak was attributed to an excitonic radiative recombination mechanism as its emission intensity exhibited a super-linear dependence on beam current with a power-law exponent of m=2. A large spatial variation in the CL emission intensity was ascribed to the presence of threading dislocations, which act as non-radiative recombination centers. A surface band gap of ∼1.4eV was estimated from STS I-V curves. © 2004 Elsevier B.V. All rights reserved.
Please use this identifier to cite or link to this item: