Scanning tunneling and cathodoluminescence spectroscopy of indium nitride

Phillips, MR; Zareie, MH; Gelhausen, O; Drago, M; Schmidtling, T; Richter, W

Scanning tunneling and cathodoluminescence spectroscopy of indium nitride

Phillips, MR

Zareie, MH Gelhausen, O Drago, M Schmidtling, T Richter, W

Permalink

Publication Type:: Journal Article
Citation:: Journal of Crystal Growth, 2004, 269 (1), pp. 106 - 110
Issue Date:: 2004-08-15

Closed Access

	Filename	Description	Size
	2004001089.pdf		955.84 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Zareie, MH	en_US
dc.contributor.author	Gelhausen, O	en_US
dc.contributor.author	Drago, M	en_US
dc.contributor.author	Schmidtling, T	en_US
dc.contributor.author	Richter, W	en_US
dc.date.issued	2004-08-15	en_US
dc.identifier.citation	Journal of Crystal Growth, 2004, 269 (1), pp. 106 - 110	en_US
dc.identifier.issn	0022-0248	en_US
dc.identifier.uri	http://hdl.handle.net/10453/639
dc.description.abstract	Indium nitride epilayers grown by metalorganic vapor-phase epitaxy have been studied by cathodoluminescence (CL) spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy (STS). A broad CL emission peak centered at 0.8eV was observed at 80K. This peak was attributed to an excitonic radiative recombination mechanism as its emission intensity exhibited a super-linear dependence on beam current with a power-law exponent of m=2. A large spatial variation in the CL emission intensity was ascribed to the presence of threading dislocations, which act as non-radiative recombination centers. A surface band gap of ∼1.4eV was estimated from STS I-V curves. © 2004 Elsevier B.V. All rights reserved.	en_US
dc.relation.ispartof	Journal of Crystal Growth	en_US
dc.relation.isbasedon	10.1016/j.jcrysgro.2004.05.087	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Scanning tunneling and cathodoluminescence spectroscopy of indium nitride	en_US
dc.type	Journal Article
utslib.citation.volume	1	en_US
utslib.citation.volume	269	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0912 Materials Engineering	en_US
dc.location.activity	Fremantle, AUSTRALIA
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	1	en_US
pubs.publication-status	Published	en_US
pubs.volume	269	en_US

Abstract:

Indium nitride epilayers grown by metalorganic vapor-phase epitaxy have been studied by cathodoluminescence (CL) spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy (STS). A broad CL emission peak centered at 0.8eV was observed at 80K. This peak was attributed to an excitonic radiative recombination mechanism as its emission intensity exhibited a super-linear dependence on beam current with a power-law exponent of m=2. A large spatial variation in the CL emission intensity was ascribed to the presence of threading dislocations, which act as non-radiative recombination centers. A surface band gap of ∼1.4eV was estimated from STS I-V curves. © 2004 Elsevier B.V. All rights reserved.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/639