Scanning tunneling and cathodoluminescence spectroscopy of indium nitride
- Publication Type:
- Journal Article
- Journal of Crystal Growth, 2004, 269 (1), pp. 106 - 110
- Issue Date:
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
Indium nitride epilayers grown by metalorganic vapor-phase epitaxy have been studied by cathodoluminescence (CL) spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy (STS). A broad CL emission peak centered at 0.8eV was observed at 80K. This peak was attributed to an excitonic radiative recombination mechanism as its emission intensity exhibited a super-linear dependence on beam current with a power-law exponent of m=2. A large spatial variation in the CL emission intensity was ascribed to the presence of threading dislocations, which act as non-radiative recombination centers. A surface band gap of ∼1.4eV was estimated from STS I-V curves. © 2004 Elsevier B.V. All rights reserved.
Please use this identifier to cite or link to this item: