Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon

Iacopi, F; Brock, RE; Iacopi, A; Hold, L; Dauskardt, RH

Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon

Iacopi, F

Brock, RE Iacopi, A Hold, L Dauskardt, RH

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Publication Type:: Journal Article
Citation:: Acta Materialia, 2013, 61 (17), pp. 6533 - 6540
Issue Date:: 2013-10-01

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Field	Value	Language
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Brock, RE	en_US
dc.contributor.author	Iacopi, A	en_US
dc.contributor.author	Hold, L	en_US
dc.contributor.author	Dauskardt, RH	en_US
dc.date.issued	2013-10-01	en_US
dc.identifier.citation	Acta Materialia, 2013, 61 (17), pp. 6533 - 6540	en_US
dc.identifier.issn	1359-6454	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117131
dc.description.abstract	Through a novel methodology for evaluating layer-by-layer residual stresses in epitaxial silicon carbide films with resolution down to 10 nm, we indicate the existence of a highly compressed interfacial nanolayer between the films and their silicon substrates. This layer is consistently present underneath all types of silicon carbide films examined herein, regardless of the extent of residual tensile stress measured in the full thickness of the films, which varies from 300 up to 1300 MPa. We link this nanolayer to the carbonization step of the film growth process and we discuss in detail the implications in terms of fracture behaviour by bulge testing of micromachined membranes.	en_US
dc.relation.ispartof	Acta Materialia	en_US
dc.relation.isbasedon	10.1016/j.actamat.2013.07.034	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Materials	en_US
dc.title	Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon	en_US
dc.type	Journal Article
utslib.citation.volume	17	en_US
utslib.citation.volume	61	en_US
utslib.for	0913 Mechanical Engineering	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.issue	17	en_US
pubs.publication-status	Published	en_US
pubs.volume	61	en_US

Abstract:

Through a novel methodology for evaluating layer-by-layer residual stresses in epitaxial silicon carbide films with resolution down to 10 nm, we indicate the existence of a highly compressed interfacial nanolayer between the films and their silicon substrates. This layer is consistently present underneath all types of silicon carbide films examined herein, regardless of the extent of residual tensile stress measured in the full thickness of the films, which varies from 300 up to 1300 MPa. We link this nanolayer to the carbonization step of the film growth process and we discuss in detail the implications in terms of fracture behaviour by bulge testing of micromachined membranes.

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http://hdl.handle.net/10453/117131