Design of Ultra-Low Phase Noise and High Power Integrated Oscillator in GaN-on-SiC HEMT Technology

Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Publication Type:
Journal Article
Citation:
IEEE Microwave and Wireless Components Letters, 2013, 24 (2), pp. 120 - 122
Issue Date:
2013-11-22
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Traditionally, the majority of microwave oscillators are implemented on gallium arsenide (GaAs), indium phosphide (InP), or silicon germanium (SiGe) technology. As a result, they often have a relatively low output power level requiring the use of additional power amplifiers (PA). This leads to increased system complexity, cost and even causes reliability issues. Gallium nitride (GaN) high electron-mobility transistors (HEMTs) have been recognized as high power and high frequency device for next generation wireless, space, military and many other applications. The fundamental material properties of GaN allow much higher voltage handling and better heat sinking capability compared to InGaP and SiGe [1]. These material advantages enable oscillators to be realized with significant improvement in output power, potentially eliminating the need for additional PAs. Therefore, the research on high power integrated oscillator design in GaN HEMTs technology has attracted much attention in the literature [2]–[3][4][5][6][7][8].
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