Design of ultra-low phase noise and high power integrated oscillator in 0.25 μ m GaN-on-SiC HEMT technology

Liu, H; Zhu, X; Boon, CC; Yi, X; Mao, M; Yang, W

Design of ultra-low phase noise and high power integrated oscillator in 0.25 μ m GaN-on-SiC HEMT technology

Liu, H Zhu, X

Boon, CC Yi, X Mao, M Yang, W

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Publication Type:: Journal Article
Citation:: IEEE Microwave and Wireless Components Letters, 2014, 24 (2), pp. 120 - 122
Issue Date:: 2014-02-01

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Field	Value	Language
dc.contributor.author	Liu, H	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Boon, CC	en_US
dc.contributor.author	Yi, X	en_US
dc.contributor.author	Mao, M	en_US
dc.contributor.author	Yang, W	en_US
dc.date.issued	2014-02-01	en_US
dc.identifier.citation	IEEE Microwave and Wireless Components Letters, 2014, 24 (2), pp. 120 - 122	en_US
dc.identifier.issn	1531-1309	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117145
dc.description.abstract	A novel ultra-low phase noise and high power integrated oscillator is presented in this letter. The proposed oscillator, based on GaN-on-SiC high electron mobility transistor (HEMT) with 0.25μm} gate length and 800 μm gate width, delivers 21 dBm output power when biased at VGS=-3 V and VDD = 28V. Phase noise was measured to be-112 dBc/Hz at 100 kHz offset and-135 dBc/Hz at 1 MHz offset from 7.9 GHz carrier, respectively. To the best of our knowledge, it achieves the lowest phase noise compared to other GaN HEMT based integrated oscillators. It is also comparable in performance to the state-of-the-art ultra-low phase noise oscillators designed in InGaP technology, while delivering more than 10 times higher output power. In addition, this oscillator also exhibits a minimum second harmonic suppression of 28.65 dBc and more than 60 dBc third harmonic suppression. The chip size is 1.1 × 0.6 mm2. The results show that the proposed oscillator has the potential to be used for both low phase noise and high power microwave source applications. © 2001-2012 IEEE.	en_US
dc.relation.ispartof	IEEE Microwave and Wireless Components Letters	en_US
dc.relation.isbasedon	10.1109/LMWC.2013.2290222	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Networking & Telecommunications	en_US
dc.title	Design of ultra-low phase noise and high power integrated oscillator in 0.25 μ m GaN-on-SiC HEMT technology	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	24	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	1005 Communications Technologies	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	24	en_US

Abstract:

A novel ultra-low phase noise and high power integrated oscillator is presented in this letter. The proposed oscillator, based on GaN-on-SiC high electron mobility transistor (HEMT) with 0.25μm} gate length and 800 μm gate width, delivers 21 dBm output power when biased at VGS=-3 V and VDD = 28V. Phase noise was measured to be-112 dBc/Hz at 100 kHz offset and-135 dBc/Hz at 1 MHz offset from 7.9 GHz carrier, respectively. To the best of our knowledge, it achieves the lowest phase noise compared to other GaN HEMT based integrated oscillators. It is also comparable in performance to the state-of-the-art ultra-low phase noise oscillators designed in InGaP technology, while delivering more than 10 times higher output power. In addition, this oscillator also exhibits a minimum second harmonic suppression of 28.65 dBc and more than 60 dBc third harmonic suppression. The chip size is 1.1 × 0.6 mm2. The results show that the proposed oscillator has the potential to be used for both low phase noise and high power microwave source applications. © 2001-2012 IEEE.

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