A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application

Iji, A; Zhu, X; Heimlich, M

A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application

Iji, A Zhu, X

Heimlich, M

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Publication Type:: Journal Article
Citation:: Microwave and Optical Technology Letters, 2013, 55 (1), pp. 89 - 93
Issue Date:: 2013-01-01

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Field	Value	Language
dc.contributor.author	Iji, A	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Heimlich, M	en_US
dc.date.issued	2013-01-01	en_US
dc.identifier.citation	Microwave and Optical Technology Letters, 2013, 55 (1), pp. 89 - 93	en_US
dc.identifier.issn	0895-2477	en_US
dc.identifier.uri	http://hdl.handle.net/10453/118163
dc.description.abstract	A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-μm silicon-on-insulator CMOS process.The designed LNA with good input and output impedance matching exhibits gain of 10.3 dB and 2-2.9 dB noise figure within the 3-5 GHz band. Moreover, the -3 dB bandwidth of the presented LNA is insensitive to process corner variations. A third-order input intercept point of -5 dBm is also achieved for the LNA at 3.6 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:89-93, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27262 Copyright © 2012 Wiley Periodicals, Inc.	en_US
dc.relation.ispartof	Microwave and Optical Technology Letters	en_US
dc.relation.isbasedon	10.1002/mop.27262	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Networking & Telecommunications	en_US
dc.title	A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application	en_US
dc.type	Journal Article
utslib.citation.volume	1	en_US
utslib.citation.volume	55	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	1005 Communications Technologies	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	1	en_US
pubs.publication-status	Published	en_US
pubs.volume	55	en_US

Abstract:

A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-μm silicon-on-insulator CMOS process.The designed LNA with good input and output impedance matching exhibits gain of 10.3 dB and 2-2.9 dB noise figure within the 3-5 GHz band. Moreover, the -3 dB bandwidth of the presented LNA is insensitive to process corner variations. A third-order input intercept point of -5 dBm is also achieved for the LNA at 3.6 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:89-93, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27262 Copyright © 2012 Wiley Periodicals, Inc.

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http://hdl.handle.net/10453/118163