A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application

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Journal Article
Microwave and Optical Technology Letters, 2013, 55 (1), pp. 89 - 93
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A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-μm silicon-on-insulator CMOS process.The designed LNA with good input and output impedance matching exhibits gain of 10.3 dB and 2-2.9 dB noise figure within the 3-5 GHz band. Moreover, the -3 dB bandwidth of the presented LNA is insensitive to process corner variations. A third-order input intercept point of -5 dBm is also achieved for the LNA at 3.6 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:89-93, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27262 Copyright © 2012 Wiley Periodicals, Inc.
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