A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application
- Publication Type:
- Journal Article
- Microwave and Optical Technology Letters, 2013, 55 (1), pp. 89 - 93
- Issue Date:
|Iji_et_al-2013-Microwave_and_Optical_Technology_Letters (1).pdf||Published Version||584.75 kB|
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-μm silicon-on-insulator CMOS process.The designed LNA with good input and output impedance matching exhibits gain of 10.3 dB and 2-2.9 dB noise figure within the 3-5 GHz band. Moreover, the -3 dB bandwidth of the presented LNA is insensitive to process corner variations. A third-order input intercept point of -5 dBm is also achieved for the LNA at 3.6 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:89-93, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27262 Copyright © 2012 Wiley Periodicals, Inc.
Please use this identifier to cite or link to this item: