THz thermal emission control via electromagnetic band engineering
- Publication Type:
- Journal Article
- Citation:
- IEEE Transactions on Terahertz Science and Technology, 2014, 4 (2), pp. 213 - 224
- Issue Date:
- 2014-03-01
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| Filename | Description | Size | |||
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| 06728692.pdf | Published Version | 2.13 MB |
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In the following, we report on the design and implementation of an inexpensive thermal source for THz radiation with a highly tunable radiation signature. It consists of five 350-μm-thick Si wafers, each spaced 1 mm apart. The thermal emission of this structure was calculated analytically and numerically. A comprehensive study was performed that included analyzing the oblique incidence, polarization, and design tolerance effects. The thermal emission was calculated using both Kirchhoff's law and directly using a Green's function method. It was measured using a Michelson interferometer. The predicted and measured thermal emission spectra had peaks around 150 GHz apart, with a narrow bandwidth of 50 GHz. The peaks were up to 80% of the expected blackbody levels and the bandgaps had emission levels of about 20% of those blackbody values. We demonstrate that, using these techniques, it is possible to achieve a desired THz thermal emission signature, with narrowband features that can be engineered to have specific angles of emission and polarization states. © 2011-2012 IEEE.
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