A 65 nm CMOS LNA for Bolometer Application

Huang, TN; Boon, CC; Zhu, FX; Yi, X; He, X; Feng, G; Lim, WM; Liu, B

A 65 nm CMOS LNA for Bolometer Application

Huang, TN Boon, CC Zhu, FX

Yi, X He, X Feng, G Lim, WM Liu, B

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Publication Type:: Journal Article
Citation:: Journal of Infrared, Millimeter, and Terahertz Waves, 2016, 37 (4), pp. 356 - 372
Issue Date:: 2016-04-01

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Field	Value	Language
dc.contributor.author	Huang, TN	en_US
dc.contributor.author	Boon, CC	en_US
dc.contributor.author	Zhu, FX https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Yi, X	en_US
dc.contributor.author	He, X	en_US
dc.contributor.author	Feng, G	en_US
dc.contributor.author	Lim, WM	en_US
dc.contributor.author	Liu, B	en_US
dc.date.issued	2016-04-01	en_US
dc.identifier.citation	Journal of Infrared, Millimeter, and Terahertz Waves, 2016, 37 (4), pp. 356 - 372	en_US
dc.identifier.issn	1866-6892	en_US
dc.identifier.uri	http://hdl.handle.net/10453/118485
dc.description.abstract	© 2016, Springer Science+Business Media New York. Modern bolometers generally consist of large-scale arrays of detectors. Implemented in conventional technologies, such bolometer arrays suffer from integrability and productivity issues. Recently, the development of CMOS technologies has presented an opportunity for the massive production of high-performance and highly integrated bolometers. This paper presents a 65-nm CMOS LNA designed for a millimeter-wave bolometer’s pre-amplification stage. By properly applying some positive feedback, the noise figure of the proposed LNA is minimized at under 6 dB and the bandwidth is extended to 30 GHz.	en_US
dc.relation.ispartof	Journal of Infrared, Millimeter, and Terahertz Waves	en_US
dc.relation.isbasedon	10.1007/s10762-016-0244-2	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Networking & Telecommunications	en_US
dc.title	A 65 nm CMOS LNA for Bolometer Application	en_US
dc.type	Journal Article
utslib.citation.volume	4	en_US
utslib.citation.volume	37	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	4	en_US
pubs.publication-status	Published	en_US
pubs.volume	37	en_US

Abstract:

© 2016, Springer Science+Business Media New York. Modern bolometers generally consist of large-scale arrays of detectors. Implemented in conventional technologies, such bolometer arrays suffer from integrability and productivity issues. Recently, the development of CMOS technologies has presented an opportunity for the massive production of high-performance and highly integrated bolometers. This paper presents a 65-nm CMOS LNA designed for a millimeter-wave bolometer’s pre-amplification stage. By properly applying some positive feedback, the noise figure of the proposed LNA is minimized at under 6 dB and the bandwidth is extended to 30 GHz.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/118485