Magnetically isolated gate driver with leakage inductance immunity

Publication Type:
Journal Article
IEEE Transactions on Power Electronics, 2014, 29 (4), pp. 1567 - 1572
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This letter presents the design of a magnetically isolated gate driver with high immunity to leakage inductance. The proposed gate driver (PGD) is developed based on a bipolar totempole gate driver (noninverting) located on the secondary side of the coupling transformer. It is able to drive a MOSFET/IGBT from standard CMOS to TTL output and down to LSTTL level. It also achieves large duty cycle ratio and small input to output delay and provides reliable isolation. In this letter, the PGD is analyzed and verified experimentally. The design guidelines are also provided including design considerations. © 1986-2012 IEEE.
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