Microresonators with Q -factors over a million from highly stressed epitaxial silicon carbide on silicon

Kermany, AR; Brawley, G; Mishra, N; Sheridan, E; Bowen, WP; Iacopi, F

Microresonators with Q -factors over a million from highly stressed epitaxial silicon carbide on silicon

Kermany, AR Brawley, G Mishra, N

Sheridan, E Bowen, WP Iacopi, F

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2014, 104 (8)
Issue Date:: 2014-01-01

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Field	Value	Language
dc.contributor.author	Kermany, AR	en_US
dc.contributor.author	Brawley, G	en_US
dc.contributor.author	Mishra, N https://orcid.org/0000-0003-3930-6210	en_US
dc.contributor.author	Sheridan, E	en_US
dc.contributor.author	Bowen, WP	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.date.issued	2014-01-01	en_US
dc.identifier.citation	Applied Physics Letters, 2014, 104 (8)	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/118753
dc.description.abstract	We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus the capability of tuning its residual stress within a large tensile range to fabricate microstrings with fundamental resonant frequencies (f0) of several hundred kHz and mechanical quality factors (Q) of over a million. The fabrication of the perfect-clamped string structures proceeds through simple silicon surface micromachining processes. The resulting f × Q product in vacuum is equal or higher as compared to state-of-the-art amorphous silicon nitride microresonators. We demonstrate that as the residual epitaxial SiC stress is doubled, the f × Q product for the fundamental mode of the strings shows a four-fold increase. © 2014 AIP Publishing LLC.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.4866268	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Microresonators with Q -factors over a million from highly stressed epitaxial silicon carbide on silicon	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.citation.volume	104	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	104	en_US

Abstract:

We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus the capability of tuning its residual stress within a large tensile range to fabricate microstrings with fundamental resonant frequencies (f0) of several hundred kHz and mechanical quality factors (Q) of over a million. The fabrication of the perfect-clamped string structures proceeds through simple silicon surface micromachining processes. The resulting f × Q product in vacuum is equal or higher as compared to state-of-the-art amorphous silicon nitride microresonators. We demonstrate that as the residual epitaxial SiC stress is doubled, the f × Q product for the fundamental mode of the strings shows a four-fold increase. © 2014 AIP Publishing LLC.

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