Microresonators with Q -factors over a million from highly stressed epitaxial silicon carbide on silicon

Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2014, 104 (8)
Issue Date:
2014-01-01
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We utilize the excellent mechanical properties of epitaxial silicon carbide (SiC) on silicon plus the capability of tuning its residual stress within a large tensile range to fabricate microstrings with fundamental resonant frequencies (f 0 ) of several hundred kHz and mechanical quality factors (Q) of over a million. The fabrication of the perfect-clamped string structures proceeds through simple silicon surface micromachining processes. The resulting f × Q product in vacuum is equal or higher as compared to state-of-the-art amorphous silicon nitride microresonators. We demonstrate that as the residual epitaxial SiC stress is doubled, the f × Q product for the fundamental mode of the strings shows a four-fold increase. © 2014 AIP Publishing LLC.
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