Design of an oscillator with low phase noise and medium output power in a 0.25 µm GaN-on-SiC high electron-mobility transistors technology

Publisher:
Institution of Engineering and Technology (IET)
Publication Type:
Journal Article
Citation:
IET Microwaves, Antennas and Propagation, 2015, 9 (8)
Issue Date:
2015-06-01
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