The transition from 3C SiC (1 1 1) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy

Gupta, B; Placidi, E; Hogan, C; Mishra, N; Iacopi, F; Motta, N

The transition from 3C SiC (1 1 1) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy

Gupta, B Placidi, E Hogan, C Mishra, N Iacopi, F

Motta, N

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Publication Type:: Journal Article
Citation:: Carbon, 2015, 91 pp. 378 - 385
Issue Date:: 2015-05-30

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Field	Value	Language
dc.contributor.author	Gupta, B	en_US
dc.contributor.author	Placidi, E	en_US
dc.contributor.author	Hogan, C	en_US
dc.contributor.author	Mishra, N	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Motta, N	en_US
dc.date.issued	2015-05-30	en_US
dc.identifier.citation	Carbon, 2015, 91 pp. 378 - 385	en_US
dc.identifier.issn	0008-6223	en_US
dc.identifier.uri	http://hdl.handle.net/10453/119221
dc.description.abstract	© 2015 Elsevier Ltd. All rights reserved. In this paper we clarify the transformation mechanism of 3C-SiC into graphene upon thermal decomposition, by a combination of high resolution Scanning Tunneling Microscopy (STM) images and first principle calculations. We studied the transition from 3C-SiC to graphene by high temperature annealing of C-terminated 3C SiC (1 1 1)/Si (1 1 1) samples in Ultra High Vacuum. By using STM we were able to observe very clear atomic resolution images of the transition from SiC (√3×√3)R30°to a new intermediate stage SiC (3/2×√3)R30°(very close to the graphene (2 × 2) reconstruction) after annealing at 1250°C. We also obtained images of the transformation of the intermediate structure into a (1 × 1) monolayer graphene, caused by further sublimation of atoms in the subsurface layer. We have interpreted the results by using Density Functional Theory - Local Density Approximation calculations, which give full account of the SiC (√3×√3)R30°reconstruction, but fail to describe the SiC (3/2×√3)R30°structure due to its incommensurability with the 3C-SiC (1 1 1) lattice.	en_US
dc.relation.ispartof	Carbon	en_US
dc.relation.isbasedon	10.1016/j.carbon.2015.05.011	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	The transition from 3C SiC (1 1 1) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy	en_US
dc.type	Journal Article
utslib.citation.volume	91	en_US
utslib.for	030606 Structural Chemistry and Spectroscopy	en_US
utslib.for	091207 Metals and Alloy Materials	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.publication-status	Published	en_US
pubs.volume	91	en_US

Abstract:

© 2015 Elsevier Ltd. All rights reserved. In this paper we clarify the transformation mechanism of 3C-SiC into graphene upon thermal decomposition, by a combination of high resolution Scanning Tunneling Microscopy (STM) images and first principle calculations. We studied the transition from 3C-SiC to graphene by high temperature annealing of C-terminated 3C SiC (1 1 1)/Si (1 1 1) samples in Ultra High Vacuum. By using STM we were able to observe very clear atomic resolution images of the transition from SiC (√3×√3)R30°to a new intermediate stage SiC (3/2×√3)R30°(very close to the graphene (2 × 2) reconstruction) after annealing at 1250°C. We also obtained images of the transformation of the intermediate structure into a (1 × 1) monolayer graphene, caused by further sublimation of atoms in the subsurface layer. We have interpreted the results by using Density Functional Theory - Local Density Approximation calculations, which give full account of the SiC (√3×√3)R30°reconstruction, but fail to describe the SiC (3/2×√3)R30°structure due to its incommensurability with the 3C-SiC (1 1 1) lattice.

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http://hdl.handle.net/10453/119221