Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers

Ranjbar Kermany, A; Iacopi, F

Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers

Ranjbar Kermany, A Iacopi, F

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Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2015, 118 (15)
Issue Date:: 2015-10-21

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Field	Value	Language
dc.contributor.author	Ranjbar Kermany, A	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.date.issued	2015-10-21	en_US
dc.identifier.citation	Journal of Applied Physics, 2015, 118 (15)	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/10453/119223
dc.description.abstract	ï¿½ 2015 AIP Publishing LLC. We introduce a simple methodology to predict and tailor the intrinsic bending of a cantilever made of a single thin film of hetero-epitaxial silicon carbide grown on silicon. The combination of our novel method for the depth profiling of residual stress with a few nm resolution with finite element modelling allows for the prediction of the bending behaviour with great accuracy. We also demonstrate experimentally that a silicon carbide cantilever made of one distinct film type can be engineered to obtain the desired degree of either upward, flat, or downward bending, by selecting the appropriate thickness and cantilever geometry. A precise control of cantilever bending is crucial for microelectrical mechanical system applications such as micro-actuators, micro-switches, and resonant sensors.	en_US
dc.relation.ispartof	Journal of Applied Physics	en_US
dc.relation.isbasedon	10.1063/1.4934188	en_US
dc.rights	info:eu-repo/semantics/openAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers	en_US
dc.type	Journal Article
utslib.citation.volume	15	en_US
utslib.citation.volume	118	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
pubs.issue	15	en_US
pubs.publication-status	Published	en_US
pubs.volume	118	en_US

Abstract:

ï¿½ 2015 AIP Publishing LLC. We introduce a simple methodology to predict and tailor the intrinsic bending of a cantilever made of a single thin film of hetero-epitaxial silicon carbide grown on silicon. The combination of our novel method for the depth profiling of residual stress with a few nm resolution with finite element modelling allows for the prediction of the bending behaviour with great accuracy. We also demonstrate experimentally that a silicon carbide cantilever made of one distinct film type can be engineered to obtain the desired degree of either upward, flat, or downward bending, by selecting the appropriate thickness and cantilever geometry. A precise control of cantilever bending is crucial for microelectrical mechanical system applications such as micro-actuators, micro-switches, and resonant sensors.

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http://hdl.handle.net/10453/119223