Highly compressed nano-layers in epitaxial silicon carbide membranes for MEMs sensors

Brock, RE; Iacopi, F; Iacopi, A; Hold, L; Dauskardt, RH

Highly compressed nano-layers in epitaxial silicon carbide membranes for MEMs sensors

Brock, RE Iacopi, F

Iacopi, A Hold, L Dauskardt, RH

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Publication Type:: Conference Proceeding
Citation:: 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014, 2014, pp. 241 - 244
Issue Date:: 2014-01-01

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Field	Value	Language
dc.contributor.author	Brock, RE	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Iacopi, A	en_US
dc.contributor.author	Hold, L	en_US
dc.contributor.author	Dauskardt, RH	en_US
dc.date.issued	2014-01-01	en_US
dc.identifier.citation	2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014, 2014, pp. 241 - 244	en_US
dc.identifier.isbn	9781479950164	en_US
dc.identifier.uri	http://hdl.handle.net/10453/120637
dc.description.abstract	Through a novel methodology for evaluating layer-by-layer residual stresses in epitaxial silicon carbide films with resolution down to 10 nm, we indicate the existence of a highly compressed interfacial nano-layer between the films and their silicon substrates. This layer is consistently present underneath all types of silicon carbide films examined herein, regardless of the extent of residual tensile stress measured in the full thickness of the films, which varies from 300 MPa up to 1300 MPa. We link this nano-layer to the carbonisation step of the film growth process and we discuss in detail the implications in terms of fracture behaviour by bulge testing of micro-machined membranes. © 2014 IEEE.	en_US
dc.relation.ispartof	2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014	en_US
dc.relation.isbasedon	10.1109/IITC.2014.6831885	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Highly compressed nano-layers in epitaxial silicon carbide membranes for MEMs sensors	en_US
dc.type	Conference Proceeding
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.publication-status	Published	en_US

Abstract:

Through a novel methodology for evaluating layer-by-layer residual stresses in epitaxial silicon carbide films with resolution down to 10 nm, we indicate the existence of a highly compressed interfacial nano-layer between the films and their silicon substrates. This layer is consistently present underneath all types of silicon carbide films examined herein, regardless of the extent of residual tensile stress measured in the full thickness of the films, which varies from 300 MPa up to 1300 MPa. We link this nano-layer to the carbonisation step of the film growth process and we discuss in detail the implications in terms of fracture behaviour by bulge testing of micro-machined membranes. © 2014 IEEE.

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http://hdl.handle.net/10453/120637