A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process

Iji, A; Zhu, X; Heimlich, M

A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process

Iji, A Zhu, X

Heimlich, M

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Publication Type:: Conference Proceeding
Citation:: 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013, 2013, pp. 278 - 281
Issue Date:: 2013-12-01

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Field	Value	Language
dc.contributor.author	Iji, A	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Heimlich, M	en_US
dc.date.issued	2013-12-01	en_US
dc.identifier.citation	2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013, 2013, pp. 278 - 281	en_US
dc.identifier.isbn	9781479909698	en_US
dc.identifier.uri	http://hdl.handle.net/10453/121069
dc.description.abstract	For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications. © 2013 IEEE.	en_US
dc.relation.ispartof	2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013	en_US
dc.relation.isbasedon	10.1109/ICUWB.2013.6663862	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process	en_US
dc.type	Conference Proceeding
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.publication-status	Published	en_US

Abstract:

For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications. © 2013 IEEE.

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http://hdl.handle.net/10453/121069