Time evolution of graphene growth on SiC as a function of annealing temperature

Zarotti, F; Gupta, B; Iacopi, F; Sgarlata, A; Tomellini, M; Motta, N

Time evolution of graphene growth on SiC as a function of annealing temperature

Zarotti, F Gupta, B Iacopi, F

Sgarlata, A Tomellini, M Motta, N

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Publication Type:: Journal Article
Citation:: Carbon, 2016, 98 pp. 307 - 312
Issue Date:: 2016-03-01

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Field	Value	Language
dc.contributor.author	Zarotti, F	en_US
dc.contributor.author	Gupta, B	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Sgarlata, A	en_US
dc.contributor.author	Tomellini, M	en_US
dc.contributor.author	Motta, N	en_US
dc.date.issued	2016-03-01	en_US
dc.identifier.citation	Carbon, 2016, 98 pp. 307 - 312	en_US
dc.identifier.issn	0008-6223	en_US
dc.identifier.uri	http://hdl.handle.net/10453/122952
dc.description.abstract	© 2015 Elsevier Ltd. All rights reserved. We followed by X-ray Photoelectron Spectroscopy (XPS) the time evolution of graphene layers obtained by annealing 3C SiC(111)/Si(111) crystals at different temperatures. The intensity of the carbon signal provides a quantification of the graphene thickness as a function of the annealing time, which follows a power law with exponent 0.5. We show that a kinetic model, based on a bottom-up growth mechanism, provides a full explanation to the evolution of the graphene thickness as a function of time, allowing to calculate the effective activation energy of the process and the energy barriers, in excellent agreement with previous theoretical results. Our study provides a complete and exhaustive picture of Si diffusion into the SiC matrix, establishing the conditions for a perfect control of the graphene growth by Si sublimation.	en_US
dc.relation.ispartof	Carbon	en_US
dc.relation.isbasedon	10.1016/j.carbon.2015.11.026	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Time evolution of graphene growth on SiC as a function of annealing temperature	en_US
dc.type	Journal Article
utslib.citation.volume	98	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.publication-status	Published	en_US
pubs.volume	98	en_US

Abstract:

© 2015 Elsevier Ltd. All rights reserved. We followed by X-ray Photoelectron Spectroscopy (XPS) the time evolution of graphene layers obtained by annealing 3C SiC(111)/Si(111) crystals at different temperatures. The intensity of the carbon signal provides a quantification of the graphene thickness as a function of the annealing time, which follows a power law with exponent 0.5. We show that a kinetic model, based on a bottom-up growth mechanism, provides a full explanation to the evolution of the graphene thickness as a function of time, allowing to calculate the effective activation energy of the process and the energy barriers, in excellent agreement with previous theoretical results. Our study provides a complete and exhaustive picture of Si diffusion into the SiC matrix, establishing the conditions for a perfect control of the graphene growth by Si sublimation.

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http://hdl.handle.net/10453/122952