A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application

Chakraborty, S; Yang, Y; Zhu, X; Sevimli, O; Xue, Q; Esselle, K; Heimlich, M

A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application

Chakraborty, S Yang, Y

Zhu, X

Sevimli, O Xue, Q Esselle, K

Heimlich, M

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Publication Type:: Journal Article
Citation:: IEEE Electron Device Letters, 2016, 37 (3), pp. 329 - 332
Issue Date:: 2016-03-01

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Field	Value	Language
dc.contributor.author	Chakraborty, S	en_US
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Sevimli, O	en_US
dc.contributor.author	Xue, Q	en_US
dc.contributor.author	Esselle, K https://orcid.org/0000-0002-3681-0086	en_US
dc.contributor.author	Heimlich, M	en_US
dc.date.issued	2016-03-01	en_US
dc.identifier.citation	IEEE Electron Device Letters, 2016, 37 (3), pp. 329 - 332	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://hdl.handle.net/10453/122955
dc.description.abstract	© 2016 IEEE. An on-chip resonator is designed and fabricated using a standard 0.13- μ m SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent LC circuit of the resonator is given, while the impact of the structure on the resonance frequencies is investigated. Using this structure along with capacitors, a compact bandpass filter (BPF) is also designed and fabricated. The measured results show that the resonator can generate a resonance at 57 GHz with the attenuation better than 13.7 dB, while the BPF has a center frequency at 31 GHz and a insertion loss of 2.4 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.024 mm2 ( 0.09× 0.27 mm2.	en_US
dc.relation.ispartof	IEEE Electron Device Letters	en_US
dc.relation.isbasedon	10.1109/LED.2016.2520960	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Applied Physics	en_US
dc.title	A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application	en_US
dc.type	Journal Article
utslib.citation.volume	3	en_US
utslib.citation.volume	37	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	3	en_US
pubs.publication-status	Published	en_US
pubs.volume	37	en_US

Abstract:

© 2016 IEEE. An on-chip resonator is designed and fabricated using a standard 0.13- μ m SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent LC circuit of the resonator is given, while the impact of the structure on the resonance frequencies is investigated. Using this structure along with capacitors, a compact bandpass filter (BPF) is also designed and fabricated. The measured results show that the resonator can generate a resonance at 57 GHz with the attenuation better than 13.7 dB, while the BPF has a center frequency at 31 GHz and a insertion loss of 2.4 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.024 mm2 ( 0.09× 0.27 mm2.

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http://hdl.handle.net/10453/122955