A Low-Power Low-Phase-Noise VCO with Self-Adjusted Active Resistor

Sun, J; Boon, CC; Zhu, X; Yi, X; Devrishi, K; Meng, F

A Low-Power Low-Phase-Noise VCO with Self-Adjusted Active Resistor

Sun, J Boon, CC Zhu, X

Yi, X Devrishi, K Meng, F

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Publication Type:: Journal Article
Citation:: IEEE Microwave and Wireless Components Letters, 2016, 26 (3), pp. 201 - 203
Issue Date:: 2016-03-01

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Field	Value	Language
dc.contributor.author	Sun, J	en_US
dc.contributor.author	Boon, CC	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Yi, X	en_US
dc.contributor.author	Devrishi, K	en_US
dc.contributor.author	Meng, F	en_US
dc.date.issued	2016-03-01	en_US
dc.identifier.citation	IEEE Microwave and Wireless Components Letters, 2016, 26 (3), pp. 201 - 203	en_US
dc.identifier.issn	1531-1309	en_US
dc.identifier.uri	http://hdl.handle.net/10453/122956
dc.description.abstract	© 2016 IEEE. This letter presents a low-power low-phase-noise VCO with self-adjusted active resistor (SAAR). A pair of PMOS transistors is introduced between cross-coupled pairs and LC-tank, serving as the SAAR. When cross-coupled transistor resides in the saturation region, SAAR exhibits small resistance, enabling fast switching and suppressing flicker noise up-conversion to 1/f3 phase noise. Moreover, as cross-coupled transistor enters triode region, SAAR will adjust to larger resistance and prevent the small conducting resistance of the cross-coupled transistor degrading the quality factor of LC tank. Fabricated in a 65 nm CMOS technology, the proposed VCO demonstrates a tuning range of 5.07-6.35 GHz (22.4%) with only 0.42 mW power consumption at 0.6 V supply. The phase noise in the worst case is -40.8 dBc/Hz at 1 kHz and -111 dBc/Hz at 1 MHz, respectively.	en_US
dc.relation.ispartof	IEEE Microwave and Wireless Components Letters	en_US
dc.relation.isbasedon	10.1109/LMWC.2016.2521167	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Networking & Telecommunications	en_US
dc.title	A Low-Power Low-Phase-Noise VCO with Self-Adjusted Active Resistor	en_US
dc.type	Journal Article
utslib.citation.volume	3	en_US
utslib.citation.volume	26	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	1005 Communications Technologies	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	3	en_US
pubs.publication-status	Published	en_US
pubs.volume	26	en_US

Abstract:

© 2016 IEEE. This letter presents a low-power low-phase-noise VCO with self-adjusted active resistor (SAAR). A pair of PMOS transistors is introduced between cross-coupled pairs and LC-tank, serving as the SAAR. When cross-coupled transistor resides in the saturation region, SAAR exhibits small resistance, enabling fast switching and suppressing flicker noise up-conversion to 1/f3 phase noise. Moreover, as cross-coupled transistor enters triode region, SAAR will adjust to larger resistance and prevent the small conducting resistance of the cross-coupled transistor degrading the quality factor of LC tank. Fabricated in a 65 nm CMOS technology, the proposed VCO demonstrates a tuning range of 5.07-6.35 GHz (22.4%) with only 0.42 mW power consumption at 0.6 V supply. The phase noise in the worst case is -40.8 dBc/Hz at 1 kHz and -111 dBc/Hz at 1 MHz, respectively.

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http://hdl.handle.net/10453/122956