Graphene growth on silicon carbide: A review
- Publication Type:
- Journal Article
- Citation:
- Physica Status Solidi (A) Applications and Materials Science, 2016, 213 (9), pp. 2277 - 2289
- Issue Date:
- 2016-09-01
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| Filename | Description | Size | |||
|---|---|---|---|---|---|
| Mishra_et_al-2016-physica_status_solidi_%28a%29.pdf | Published Version | 3.09 MB |
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© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Graphene has been widely heralded over the last decade as one of the most promising nanomaterials for integrated, miniaturized applications spanning from nanoelectronics, interconnections, thermal management, sensing, to optoelectronics. Graphene grown on silicon carbide is currently the most likely candidate to fulfill this promise. As a matter of fact, the capability to synthesize high-quality graphene over large areas using processes and substrates compatible as much as possible with the well-established semiconductor manufacturing technologies is one crucial requirement. We review here, the enormous scientific and technological advances achieved in terms of epitaxial growth of graphene from thermal decomposition of bulk silicon carbide and the fine control of the graphene electronic properties through intercalation. Finally, we discuss perspectives on epitaxial graphene growth from silicon carbide on silicon, a particularly challenging area that could result in maximum benefit for the integration of graphene with silicon technologies.
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