Compact On-Chip Bandpass Filter with Improved In-Band Flatness and Stopband Attenuation in 0.13-μ (Bi)-CMOS Technology

Yang, Y; Liu, H; Hou, ZJ; Zhu, X; Dutkiewicz, E; Xue, Q

Compact On-Chip Bandpass Filter with Improved In-Band Flatness and Stopband Attenuation in 0.13-μ (Bi)-CMOS Technology

Yang, Y

Liu, H Hou, ZJ Zhu, X

Dutkiewicz, E

Xue, Q

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Publication Type:: Journal Article
Citation:: IEEE Electron Device Letters, 2017, 38 (10), pp. 1359 - 1362
Issue Date:: 2017-10-01

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Field	Value	Language
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156	en_US
dc.contributor.author	Liu, H	en_US
dc.contributor.author	Hou, ZJ	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Dutkiewicz, E https://orcid.org/0000-0002-4268-9286	en_US
dc.contributor.author	Xue, Q https://orcid.org/0000-0001-7439-2156	en_US
dc.date.issued	2017-10-01	en_US
dc.identifier.citation	IEEE Electron Device Letters, 2017, 38 (10), pp. 1359 - 1362	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://hdl.handle.net/10453/123922
dc.description.abstract	© 1980-2012 IEEE. In this letter, an on-chip miniaturized bandpass filter (BPF) is presented, which is based on a grounded center-Tapped ring resonator (CTRR) with shunt capacitive loading. To analyze the principle of this design, a simple but effective equivalent circuit model is provided. Using this model, it is easy to show that the CTRR-based approach has a potential to generate two transmission poles within the passband. Compared with the conventional single-pole-based approach, this dual-pole design not only possesses a flexibility of controlling the passband width, but also has better flatness of insertion loss in the passband. In addition, this approach is able to significantly improve the stopband performance. To further demonstrate the feasibility of this approach in practice, the structure is implemented and fabricated in a commercial 0.13-μ (Bi)-CMOS SiGe technology. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 42.4%. The minimum insertion loss is 2.6 dB, while the stopband rejection is maintained to be better than 20 dB beyond 58 GHz. The chip, excluding the pads, is very compact at only 0.03 mm2 (0.11 × 0.28 mm2.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DE160101032
dc.relation.ispartof	IEEE Electron Device Letters	en_US
dc.relation.isbasedon	10.1109/LED.2017.2739186	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Compact On-Chip Bandpass Filter with Improved In-Band Flatness and Stopband Attenuation in 0.13-μ (Bi)-CMOS Technology	en_US
dc.type	Journal Article
utslib.citation.volume	10	en_US
utslib.citation.volume	38	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	10	en_US
pubs.publication-status	Published	en_US
pubs.volume	38	en_US

Abstract:

© 1980-2012 IEEE. In this letter, an on-chip miniaturized bandpass filter (BPF) is presented, which is based on a grounded center-Tapped ring resonator (CTRR) with shunt capacitive loading. To analyze the principle of this design, a simple but effective equivalent circuit model is provided. Using this model, it is easy to show that the CTRR-based approach has a potential to generate two transmission poles within the passband. Compared with the conventional single-pole-based approach, this dual-pole design not only possesses a flexibility of controlling the passband width, but also has better flatness of insertion loss in the passband. In addition, this approach is able to significantly improve the stopband performance. To further demonstrate the feasibility of this approach in practice, the structure is implemented and fabricated in a commercial 0.13-μ (Bi)-CMOS SiGe technology. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 42.4%. The minimum insertion loss is 2.6 dB, while the stopband rejection is maintained to be better than 20 dB beyond 58 GHz. The chip, excluding the pads, is very compact at only 0.03 mm2 (0.11 × 0.28 mm2.

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http://hdl.handle.net/10453/123922