Design of a Miniaturized On-Chip Bandpass Filter Using Edge-Coupled Resonators for Millimeter-Wave Applications

Yang, Y; Zhu, X; Dutkiewicz, E; Xue, Q

Design of a Miniaturized On-Chip Bandpass Filter Using Edge-Coupled Resonators for Millimeter-Wave Applications

Yang, Y

Zhu, X

Dutkiewicz, E

Xue, Q

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Publication Type:: Journal Article
Citation:: IEEE Transactions on Electron Devices, 2017, 64 (9), pp. 3822 - 3828
Issue Date:: 2017-09-01

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Field	Value	Language
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Dutkiewicz, E https://orcid.org/0000-0002-4268-9286	en_US
dc.contributor.author	Xue, Q https://orcid.org/0000-0001-7439-2156	en_US
dc.date.issued	2017-09-01	en_US
dc.identifier.citation	IEEE Transactions on Electron Devices, 2017, 64 (9), pp. 3822 - 3828	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://hdl.handle.net/10453/123956
dc.description.abstract	© 2017 IEEE. A unique miniaturization technique for on-chip passive device implemented in gallium arsenide (GaAs)-based technology is presented, which is based on edge-coupled cells (ECCs). The principle of an ECC is first studied by means of the equivalent LC circuits. Then, using the ECC as a baseline, a combination of different shorting-ground and tapping methods is fully investigated in terms of their impact on frequency responses. By directly shorting the specific edge-coupled fingers to the ground, an ECC can be converted into a resonator without increasing any physical size. To further demonstrate the feasibility of using this technique for miniaturized monolithic microwave integrated circuit design, an on-chip bandpass filter (BPF) is implemented and fabricated in a commercial 0.1-μ m GaAs technology. The measurement results show that the 3-dB bandwidth of the filter is from 21.2 to 26.5 GHz, while the insertion loss is less than 2.9 dB at 23 GHz. In addition, more than 30 dB of suppression is achieved from 0 to 15 GHz and from 44 to 54 GHz. The size of the BPF is only 640 × 280 μ m2, excluding the pads, which is equivalent to 0.17 × 0.08 λg2. (λg is the guided wavelength at 23.5 GHz.)	en_US
dc.relation	http://purl.org/au-research/grants/arc/DE160101032
dc.relation.ispartof	IEEE Transactions on Electron Devices	en_US
dc.relation.isbasedon	10.1109/TED.2017.2720185	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Design of a Miniaturized On-Chip Bandpass Filter Using Edge-Coupled Resonators for Millimeter-Wave Applications	en_US
dc.type	Journal Article
utslib.citation.volume	9	en_US
utslib.citation.volume	64	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	9	en_US
pubs.publication-status	Published	en_US
pubs.volume	64	en_US

Abstract:

© 2017 IEEE. A unique miniaturization technique for on-chip passive device implemented in gallium arsenide (GaAs)-based technology is presented, which is based on edge-coupled cells (ECCs). The principle of an ECC is first studied by means of the equivalent LC circuits. Then, using the ECC as a baseline, a combination of different shorting-ground and tapping methods is fully investigated in terms of their impact on frequency responses. By directly shorting the specific edge-coupled fingers to the ground, an ECC can be converted into a resonator without increasing any physical size. To further demonstrate the feasibility of using this technique for miniaturized monolithic microwave integrated circuit design, an on-chip bandpass filter (BPF) is implemented and fabricated in a commercial 0.1-μ m GaAs technology. The measurement results show that the 3-dB bandwidth of the filter is from 21.2 to 26.5 GHz, while the insertion loss is less than 2.9 dB at 23 GHz. In addition, more than 30 dB of suppression is achieved from 0 to 15 GHz and from 44 to 54 GHz. The size of the BPF is only 640 × 280 μ m2, excluding the pads, which is equivalent to 0.17 × 0.08 λg2. (λg is the guided wavelength at 23.5 GHz.)

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http://hdl.handle.net/10453/123956