Design of an On-Chip Highly Sensitive Misalignment Sensor in Silicon Technology

Tong, X; Yang, Y; Zhong, Y; Zhu, X; Lin, J; Dutkiewicz, E

Design of an On-Chip Highly Sensitive Misalignment Sensor in Silicon Technology

Tong, X Yang, Y

Zhong, Y Zhu, X

Lin, J Dutkiewicz, E

Permalink

Publication Type:: Journal Article
Citation:: IEEE Sensors Journal, 2017, 17 (5), pp. 1211 - 1212
Issue Date:: 2017-03-01

Closed Access

	Filename	Description	Size
	07781608.pdf	Published Version	465.72 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Tong, X	en_US
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156	en_US
dc.contributor.author	Zhong, Y	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Lin, J	en_US
dc.contributor.author	Dutkiewicz, E https://orcid.org/0000-0002-4268-9286	en_US
dc.date.issued	2017-03-01	en_US
dc.identifier.citation	IEEE Sensors Journal, 2017, 17 (5), pp. 1211 - 1212	en_US
dc.identifier.issn	1530-437X	en_US
dc.identifier.uri	http://hdl.handle.net/10453/123957
dc.description.abstract	© 2016 IEEE. Advanced micromachining technology has made magnificent progress for fabrication of non-planar circuits. Using this technology, circuits and systems can be implemented in a more cost-effective way. Unlike the conventional planar circuit, low-cost and highly sensitive misalignment sensor is required to detect imperfect placement of different micro-devices, which may be of the order of sub-micrometers. Currently, this is hardly to be achieved by using the existing approaches. In this letter, we present a novel sensor design approach utilizing the parasitic capacitance of an integrated coupled-line resonator for misalignment sensing. Due to vertical misalignment between two metal strips, the parasitic capacitance of the sensor varies, which results in a resonance shift from 53 to 68 GHz, while a reasonably strong transmission notch is still maintained. Taking advantage of this principle, misalignment can be effectively detected. To prove the concept, several devices are fabricated in a standard silicon technology. Three samples with the same structure are used to evaluate the reliability, while eight different structures are used to verify the concept. All results are extensively validated through both simulation and measurements.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DE160101032
dc.relation.ispartof	IEEE Sensors Journal	en_US
dc.relation.isbasedon	10.1109/JSEN.2016.2638438	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Analytical Chemistry	en_US
dc.title	Design of an On-Chip Highly Sensitive Misalignment Sensor in Silicon Technology	en_US
dc.type	Journal Article
utslib.citation.volume	5	en_US
utslib.citation.volume	17	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	0913 Mechanical Engineering	en_US
utslib.for	0205 Optical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	closed_access	*
pubs.issue	5	en_US
pubs.publication-status	Published	en_US
pubs.volume	17	en_US

Abstract:

© 2016 IEEE. Advanced micromachining technology has made magnificent progress for fabrication of non-planar circuits. Using this technology, circuits and systems can be implemented in a more cost-effective way. Unlike the conventional planar circuit, low-cost and highly sensitive misalignment sensor is required to detect imperfect placement of different micro-devices, which may be of the order of sub-micrometers. Currently, this is hardly to be achieved by using the existing approaches. In this letter, we present a novel sensor design approach utilizing the parasitic capacitance of an integrated coupled-line resonator for misalignment sensing. Due to vertical misalignment between two metal strips, the parasitic capacitance of the sensor varies, which results in a resonance shift from 53 to 68 GHz, while a reasonably strong transmission notch is still maintained. Taking advantage of this principle, misalignment can be effectively detected. To prove the concept, several devices are fabricated in a standard silicon technology. Three samples with the same structure are used to evaluate the reliability, while eight different structures are used to verify the concept. All results are extensively validated through both simulation and measurements.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/123957