Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Kermany, AR; Bennett, JS; Valenzuela, VM; Bowen, WP; Iacopi, F

Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Kermany, AR Bennett, JS Valenzuela, VM Bowen, WP Iacopi, F

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Publication Type:: Journal Article
Citation:: Physica Status Solidi (A) Applications and Materials Science, 2017, 214 (4)
Issue Date:: 2017-04-01

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Field	Value	Language
dc.contributor.author	Kermany, AR	en_US
dc.contributor.author	Bennett, JS	en_US
dc.contributor.author	Valenzuela, VM	en_US
dc.contributor.author	Bowen, WP	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.date.issued	2017-04-01	en_US
dc.identifier.citation	Physica Status Solidi (A) Applications and Materials Science, 2017, 214 (4)	en_US
dc.identifier.issn	1862-6300	en_US
dc.identifier.uri	http://hdl.handle.net/10453/125227
dc.description.abstract	© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Epitaxial silicon carbide is promising for chemical resonant sensing applications due to its excellent mechanical, thermal, and biochemical properties. This paper reviews six important aspects of (i) silicon carbide heteroepitaxial growth and residual stress; (ii) silicon carbide beam resonators, resonator types, and fabrication processes; (iii) sensing principles, dynamic sensing mechanical performance, and transduction techniques; (iv) damping parameters; (v) mean stress influence on mass sensitivity of SiC flexural microbridge resonators; and (vi) gradient stress impact on SiC cantilever static behavior. The primary goal is to suggest the means to improve the mass sensitivity parameter and application range of epitaxial silicon carbide microbeam resonators and benchmark it with other relevant materials.	en_US
dc.relation.ispartof	Physica Status Solidi (A) Applications and Materials Science	en_US
dc.relation.isbasedon	10.1002/pssa.201600437	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Potential of epitaxial silicon carbide microbeam resonators for chemical sensing	en_US
dc.type	Journal Article
utslib.citation.volume	4	en_US
utslib.citation.volume	214	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.issue	4	en_US
pubs.publication-status	Published	en_US
pubs.volume	214	en_US

Abstract:

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Epitaxial silicon carbide is promising for chemical resonant sensing applications due to its excellent mechanical, thermal, and biochemical properties. This paper reviews six important aspects of (i) silicon carbide heteroepitaxial growth and residual stress; (ii) silicon carbide beam resonators, resonator types, and fabrication processes; (iii) sensing principles, dynamic sensing mechanical performance, and transduction techniques; (iv) damping parameters; (v) mean stress influence on mass sensitivity of SiC flexural microbridge resonators; and (vi) gradient stress impact on SiC cantilever static behavior. The primary goal is to suggest the means to improve the mass sensitivity parameter and application range of epitaxial silicon carbide microbeam resonators and benchmark it with other relevant materials.

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http://hdl.handle.net/10453/125227