Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Publication Type:
Journal Article
Citation:
Physica Status Solidi (A) Applications and Materials Science, 2017, 214 (4)
Issue Date:
2017-04-01
Metrics:
Full metadata record
Files in This Item:
Filename Description Size
Kermany_et_al-2016-physica_status_solidi_%28a%29.pdfPublished Version784.96 kB
Adobe PDF
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Epitaxial silicon carbide is promising for chemical resonant sensing applications due to its excellent mechanical, thermal, and biochemical properties. This paper reviews six important aspects of (i) silicon carbide heteroepitaxial growth and residual stress; (ii) silicon carbide beam resonators, resonator types, and fabrication processes; (iii) sensing principles, dynamic sensing mechanical performance, and transduction techniques; (iv) damping parameters; (v) mean stress influence on mass sensitivity of SiC flexural microbridge resonators; and (vi) gradient stress impact on SiC cantilever static behavior. The primary goal is to suggest the means to improve the mass sensitivity parameter and application range of epitaxial silicon carbide microbeam resonators and benchmark it with other relevant materials.
Please use this identifier to cite or link to this item: