A Low-Loss Bandpass Filter using Edge-Coupled Resonator with Capacitive Feeding in (Bi)-CMOS Technology

Yang, Y; Zhu, H; Zhu, X; Xue, Q

A Low-Loss Bandpass Filter using Edge-Coupled Resonator with Capacitive Feeding in (Bi)-CMOS Technology

Yang, Y

Zhu, H

Zhu, X

Xue, Q

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Publication Type:: Journal Article
Citation:: IEEE Electron Device Letters, 2018, 39 (6), pp. 787 - 790
Issue Date:: 2018-06-01

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Field	Value	Language
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156	en_US
dc.contributor.author	Zhu, H https://orcid.org/0000-0002-5157-8457	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Xue, Q	en_US
dc.date.issued	2018-06-01	en_US
dc.identifier.citation	IEEE Electron Device Letters, 2018, 39 (6), pp. 787 - 790	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://hdl.handle.net/10453/128121
dc.description.abstract	© 1980-2012 IEEE. In this Letter, a flexible approach for low-loss on-chip bandpass filter (BPF) design in CMOS technology is presented. The proposed approach takes the advantages of a combination of an edge-coupled electromagnetic structure, namely resonator, and a pair of metal-insulator-metal capacitors for BPF implementation. To demonstrate the insight of the approach, the designed resonator is analyzed in details by means of a simplified equivalent LC-circuit model. Then, the impact on the BPF design due to the variations of the feeding capacitance is investigated. To prove the concept, both the resonator and BPF are fabricated in a standard 0.13- μ m CMOS technology. The measured results show that the designed resonator can generate a notch with 20-dB attenuation at 59.4 GHz, while the BPF has a center frequency of 35.4 GHz with an insertion loss of 1.7 dB. The chip size of both devices, excluding the test pads, is only 0.039 mm2 (0.15 × 0.26 mm2).	en_US
dc.relation	http://purl.org/au-research/grants/arc/DE160101032
dc.relation.ispartof	IEEE Electron Device Letters	en_US
dc.relation.isbasedon	10.1109/LED.2018.2826782	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Applied Physics	en_US
dc.title	A Low-Loss Bandpass Filter using Edge-Coupled Resonator with Capacitive Feeding in (Bi)-CMOS Technology	en_US
dc.type	Journal Article
utslib.citation.volume	6	en_US
utslib.citation.volume	39	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	6	en_US
pubs.publication-status	Published	en_US
pubs.volume	39	en_US

Abstract:

© 1980-2012 IEEE. In this Letter, a flexible approach for low-loss on-chip bandpass filter (BPF) design in CMOS technology is presented. The proposed approach takes the advantages of a combination of an edge-coupled electromagnetic structure, namely resonator, and a pair of metal-insulator-metal capacitors for BPF implementation. To demonstrate the insight of the approach, the designed resonator is analyzed in details by means of a simplified equivalent LC-circuit model. Then, the impact on the BPF design due to the variations of the feeding capacitance is investigated. To prove the concept, both the resonator and BPF are fabricated in a standard 0.13- μ m CMOS technology. The measured results show that the designed resonator can generate a notch with 20-dB attenuation at 59.4 GHz, while the BPF has a center frequency of 35.4 GHz with an insertion loss of 1.7 dB. The chip size of both devices, excluding the test pads, is only 0.039 mm2 (0.15 × 0.26 mm2).

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http://hdl.handle.net/10453/128121