A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-mu\text{m} Technology

Hou, ZJ; Yang, Y; Chiu, L; Zhu, X; Dutkiewicz, E; Vardaxoglou, JC; Xue, Q

A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-mu\text{m} Technology

Hou, ZJ Yang, Y

Chiu, L Zhu, X

Dutkiewicz, E

Vardaxoglou, JC Xue, Q

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Publication Type:: Journal Article
Citation:: IEEE Transactions on Circuits and Systems I: Regular Papers, 2018, 65 (7), pp. 2139 - 2150
Issue Date:: 2018-07-01

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Field	Value	Language
dc.contributor.author	Hou, ZJ	en_US
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156	en_US
dc.contributor.author	Chiu, L	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Dutkiewicz, E https://orcid.org/0000-0002-4268-9286	en_US
dc.contributor.author	Vardaxoglou, JC	en_US
dc.contributor.author	Xue, Q	en_US
dc.date.issued	2018-07-01	en_US
dc.identifier.citation	IEEE Transactions on Circuits and Systems I: Regular Papers, 2018, 65 (7), pp. 2139 - 2150	en_US
dc.identifier.issn	1549-8328	en_US
dc.identifier.uri	http://hdl.handle.net/10453/129533
dc.description.abstract	© 2004-2012 IEEE. Load-variation insensitivity, for impedance matching between power amplifiers (PAs) and transmitting antennas, contributes to challenging the design of millimeter-wave wireless systems. In this paper, a W -band two-way balanced PA based on a compact quadrature coupler with a broadside coupled strip-line (BCSL) as the core is presented to enhance the load-variation insensitivity and stability. The proposed coupler is truly broadband with low amplitude and phase imbalance. The proposed W -band balanced PA achieves higher power-added efficiency (PAE) and unsaturated output power {P} -{\mathrm{ sat}} over wide frequency bandwidth. The W -band balanced PA is implemented in a 0.13- \mu \text{m} SiGe BiCMOS process and achieves a measured {P} -{\mathrm{ sat}} of 16.3 dBm and a peak PAE of 14.1% at 100 GHz (with 1.6-V power supply). The measured {P} -{\mathrm{ sat}} with 1-dB bandwidth is from 91 to 102 GHz. The measured results present the feasibility of the compact quadrature coupler. The total chip surface area (with pads) is 0.64 mm2, where the size of the proposed quadrature coupler area is only 0.04 mm2.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DE160101032
dc.relation.ispartof	IEEE Transactions on Circuits and Systems I: Regular Papers	en_US
dc.relation.isbasedon	10.1109/TCSI.2017.2779174	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Electrical & Electronic Engineering	en_US
dc.title	A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-mu\text{m} Technology	en_US
dc.type	Journal Article
utslib.citation.volume	7	en_US
utslib.citation.volume	65	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	7	en_US
pubs.publication-status	Published	en_US
pubs.volume	65	en_US

Abstract:

© 2004-2012 IEEE. Load-variation insensitivity, for impedance matching between power amplifiers (PAs) and transmitting antennas, contributes to challenging the design of millimeter-wave wireless systems. In this paper, a W -band two-way balanced PA based on a compact quadrature coupler with a broadside coupled strip-line (BCSL) as the core is presented to enhance the load-variation insensitivity and stability. The proposed coupler is truly broadband with low amplitude and phase imbalance. The proposed W -band balanced PA achieves higher power-added efficiency (PAE) and unsaturated output power {P} -{\mathrm{ sat}} over wide frequency bandwidth. The W -band balanced PA is implemented in a 0.13- \mu \text{m} SiGe BiCMOS process and achieves a measured {P} -{\mathrm{ sat}} of 16.3 dBm and a peak PAE of 14.1% at 100 GHz (with 1.6-V power supply). The measured {P} -{\mathrm{ sat}} with 1-dB bandwidth is from 91 to 102 GHz. The measured results present the feasibility of the compact quadrature coupler. The total chip surface area (with pads) is 0.64 mm2, where the size of the proposed quadrature coupler area is only 0.04 mm2.

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http://hdl.handle.net/10453/129533