A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-mu\text{m} Technology

Publication Type:
Journal Article
Citation:
IEEE Transactions on Circuits and Systems I: Regular Papers, 2018, 65 (7), pp. 2139 - 2150
Issue Date:
2018-07-01
Metrics:
Full metadata record
Files in This Item:
Filename Description Size
08233134.pdfPublished Version2.74 MB
Adobe PDF
© 2004-2012 IEEE. Load-variation insensitivity, for impedance matching between power amplifiers (PAs) and transmitting antennas, contributes to challenging the design of millimeter-wave wireless systems. In this paper, a W -band two-way balanced PA based on a compact quadrature coupler with a broadside coupled strip-line (BCSL) as the core is presented to enhance the load-variation insensitivity and stability. The proposed coupler is truly broadband with low amplitude and phase imbalance. The proposed W -band balanced PA achieves higher power-added efficiency (PAE) and unsaturated output power {P} -{\mathrm{ sat}} over wide frequency bandwidth. The W -band balanced PA is implemented in a 0.13- \mu \text{m} SiGe BiCMOS process and achieves a measured {P} -{\mathrm{ sat}} of 16.3 dBm and a peak PAE of 14.1% at 100 GHz (with 1.6-V power supply). The measured {P} -{\mathrm{ sat}} with 1-dB bandwidth is from 91 to 102 GHz. The measured results present the feasibility of the compact quadrature coupler. The total chip surface area (with pads) is 0.64 mm2, where the size of the proposed quadrature coupler area is only 0.04 mm2.
Please use this identifier to cite or link to this item: