Few-atomic-layered hexagonal boron nitride: CVD growth, characterization, and applications

Khan, MH; Liu, HK; Sun, X; Yamauchi, Y; Bando, Y; Golberg, D; Huang, Z

Few-atomic-layered hexagonal boron nitride: CVD growth, characterization, and applications

Khan, MH Liu, HK Sun, X Yamauchi, Y Bando, Y Golberg, D Huang, Z

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Publication Type:: Journal Article
Citation:: Materials Today, 2017, 20 (10), pp. 611 - 628
Issue Date:: 2017-12-01

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Field	Value	Language
dc.contributor.author	Khan, MH	en_US
dc.contributor.author	Liu, HK	en_US
dc.contributor.author	Sun, X	en_US
dc.contributor.author	Yamauchi, Y	en_US
dc.contributor.author	Bando, Y	en_US
dc.contributor.author	Golberg, D	en_US
dc.contributor.author	Huang, Z https://orcid.org/0000-0003-1985-0884	en_US
dc.date.available	2020-05-25T19:23:54Z
dc.date.issued	2017-12-01	en_US
dc.identifier.citation	Materials Today, 2017, 20 (10), pp. 611 - 628	en_US
dc.identifier.issn	1369-7021	en_US
dc.identifier.uri	http://hdl.handle.net/10453/131581
dc.description.abstract	© 2017 Two-dimensional (2D) materials have shown outstanding properties that make them the materials of choice for future semiconductor and flexible nanoelectronics. Hexagonal boron nitride nanosheet (BNNS) is one of the most studied 2D materials due to its extraordinary properties and potential applications. The synthesis of large, homogeneous, and few-layered BNNS, however, remains challenging. Among the various synthetic routes, chemical vapour deposition (CVD) is preferred on the grounds of its potential to yield large BNNS with controllable atomic layers and minimal contamination. We thus devote this review to the CVD growth of BNNS, and its characterization and applications. The recent progresses in the CVD growth of BNNS is firstly summarized from the aspects of precursors, substrates, growth mechanisms, and transfer techniques. This review then moves on to the characterization of few-atomic-layered h-BN sheets, covering a variety of microscopic and spectroscopic techniques that have proved useful for assessing the quality of BNNS. The applications of the BNNS are also summarized. This review is expected to instigate new methods and improvements in relation to the CVD growth of BNNS, which has enabled exceptional performance as a key component of nanoscale electronics.	en_US
dc.relation.ispartof	Materials Today	en_US
dc.relation.isbasedon	10.1016/j.mattod.2017.04.027	en_US
dc.subject.classification	Materials	en_US
dc.title	Few-atomic-layered hexagonal boron nitride: CVD growth, characterization, and applications	en_US
dc.type	Journal Article
utslib.citation.volume	10	en_US
utslib.citation.volume	20	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Civil and Environmental Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - CTWW - Centre for Technology in Water and Wastewater Treatment
utslib.copyright.status	open_access
pubs.issue	10	en_US
pubs.publication-status	Published	en_US
pubs.volume	20	en_US

Abstract:

© 2017 Two-dimensional (2D) materials have shown outstanding properties that make them the materials of choice for future semiconductor and flexible nanoelectronics. Hexagonal boron nitride nanosheet (BNNS) is one of the most studied 2D materials due to its extraordinary properties and potential applications. The synthesis of large, homogeneous, and few-layered BNNS, however, remains challenging. Among the various synthetic routes, chemical vapour deposition (CVD) is preferred on the grounds of its potential to yield large BNNS with controllable atomic layers and minimal contamination. We thus devote this review to the CVD growth of BNNS, and its characterization and applications. The recent progresses in the CVD growth of BNNS is firstly summarized from the aspects of precursors, substrates, growth mechanisms, and transfer techniques. This review then moves on to the characterization of few-atomic-layered h-BN sheets, covering a variety of microscopic and spectroscopic techniques that have proved useful for assessing the quality of BNNS. The applications of the BNNS are also summarized. This review is expected to instigate new methods and improvements in relation to the CVD growth of BNNS, which has enabled exceptional performance as a key component of nanoscale electronics.

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http://hdl.handle.net/10453/131581