A design of inverse class-J power amplifier using varactor diode for 4G communication systems
- Publication Type:
- Conference Proceeding
- 2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment and Management, HNICEM 2018, 2019
- Issue Date:
|Camera_Ready_Paper#88_A-Design-of-Inverse-Class-J-Power_Amplifier_edited_6pages_UTS_FINAL.pdf||Published version||1.68 MB|
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© 2018 IEEE. A Class-J Power Amplifier is designed with a varactor diode on its input matching network to improve its efficiency. To enhance the efficiency of the designed power amplifier, it is operated in inverse mode. The design, simulation, and layout generation of the circuits are implemented using the Advance Design System Tool of Keysight. Although GaN devices are known to have better performance than GaAs devices, a GaAs FET is still used as the active device for the designed power amplifier as it is more reliable compared to GaN devices. This design of Class-J power amplifier in inverse mode with varactor diode exhibits a higher power output, gain and efficiency of 30.14 dBm, 8. 14dB and 90.84%, respectively, in comparison to existing class-J power amplifier with power output of 24-27dBm, gain of 7-10 dB and efficiency of 50-5S% only. Using a One Tone Harmonic Balance Simulation for a 2GHz fundamental frequency, the resulting fundamental output power is 30. 475dBm, a transducer power gain of 6.175, a PAE of 26.943 and a gain compression of 12. 602dB. The designed power amplifier is ready to be fabricated on a Monolithic Microwave Integrated Circuit (MMIC).
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