Millimeter-wave BPFs design using quasi-lumped elements in 0.13-µm (Bi)-CMOS technology
- Publication Type:
- Conference Proceeding
- Proceedings - IEEE International Symposium on Circuits and Systems, 2019, 2019-May
- Issue Date:
|Millimeter-Wave BPFs Design using Quasi-Lumped Elements in 0.13-μm (Bi)-CMOS Technology.pdf||Published version||2.47 MB|
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© 2019 IEEE A design methodology using quasi-lumped elements for compact millimeter-wave on-chip bandpass filter (BPF) is presented in this work. To implement BPF using this approach, a novel inductor cell is presented first and then using this cell along with metal-insulator-metal (MIM) capacitors, two BPFs are designed. For the purpose of proof-of-concept, all three designs are implemented and fabricated in a standard 0.13-µm (Bi)-CMOS technology. The measurements show that the inductor cell generates a notch at 47 GHz with a chip size of 0.096 × 0.294 mm2 without pads. Moreover, the 1st BPF has the center frequency at 27 GHz with an insertion loss of 2.5 dB and it has one transmission zero at 58 GHz with a peak attenuation of 23 dB. Unlike the 1st design, the 2nd design has two transmission zeros. The center frequency of this BPF is located at 29 GHz with a minimum insertion loss of 3.5 dB. Without the measurement pads, the chip sizes of the two BPFs are 0.076 × 0.296 mm2 and 0.096 × 0.296 mm2, respectively.
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