Characterization of SOS-CMOS FETs at low temperatures for the design of integrated circuits for quantum bit control and readout

Ekanayake, SR; Lehmann, T; Dzurak, AS; Clark, RG; Brawley, A

Characterization of SOS-CMOS FETs at low temperatures for the design of integrated circuits for quantum bit control and readout

Ekanayake, SR Lehmann, T Dzurak, AS Clark, RG Brawley, A

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Publication Type:: Journal Article
Citation:: IEEE Transactions on Electron Devices, 2010, 57 (2), pp. 539 - 547
Issue Date:: 2010-02-01

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Field	Value	Language
dc.contributor.author	Ekanayake, SR	en_US
dc.contributor.author	Lehmann, T	en_US
dc.contributor.author	Dzurak, AS	en_US
dc.contributor.author	Clark, RG	en_US
dc.contributor.author	Brawley, A	en_US
dc.date.issued	2010-02-01	en_US
dc.identifier.citation	IEEE Transactions on Electron Devices, 2010, 57 (2), pp. 539 - 547	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://hdl.handle.net/10453/13579
dc.description.abstract	We have assessed the use of commercial silicon-on-sapphire CMOS electronics in control circuits, which could be used to interface with quantum bits at low temperatures. We have characterized n-type MOSFETs, p-type MOSFETs, and an n+-diffusion resistor at 300 K and 4.2 K and extended these studies into the millikelvin regime. Our measurements of dc responses at 300 K, 4.2 K, and subkelvin and transient responses at 300 K and 4.2 K show that these devices favorably operate at low temperatures with minor changes to their 300-K characteristics and no appreciable change to their operating speed. Our results indicate that control circuits based on commercial CMOS devices may successfully be operated at low temperatures for the control and readout of quantum bits. © 2009 IEEE.	en_US
dc.relation.ispartof	IEEE Transactions on Electron Devices	en_US
dc.relation.isbasedon	10.1109/TED.2009.2037381	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Characterization of SOS-CMOS FETs at low temperatures for the design of integrated circuits for quantum bit control and readout	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	57	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
dc.location.activity	ISI:000273764800026	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	57	en_US

Abstract:

We have assessed the use of commercial silicon-on-sapphire CMOS electronics in control circuits, which could be used to interface with quantum bits at low temperatures. We have characterized n-type MOSFETs, p-type MOSFETs, and an n+-diffusion resistor at 300 K and 4.2 K and extended these studies into the millikelvin regime. Our measurements of dc responses at 300 K, 4.2 K, and subkelvin and transient responses at 300 K and 4.2 K show that these devices favorably operate at low temperatures with minor changes to their 300-K characteristics and no appreciable change to their operating speed. Our results indicate that control circuits based on commercial CMOS devices may successfully be operated at low temperatures for the control and readout of quantum bits. © 2009 IEEE.

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