Characterisation Of SOS-CMOS FETs At Low Temperatures For The Design Of Integrated Circuits For Quantum Bit Control And Readout

Publisher:
IEEE-Inst Electrical Electronics Engineers Inc
Publication Type:
Journal Article
Citation:
IEEE Transactions On Electron Devices, 2010, 57 (2), pp. 539 - 547
Issue Date:
2010-01
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We have assessed the use of commercial silicon-on-sapphire CMOS electronics in control circuits, which could be used to interface with quantum bits at low temperatures. We have characterized n-type MOSFETs, p-type MOSFETs, and an n(+)-diffusion resistor
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