Multi-variable thermal modeling of power devices considering mutual coupling
- Publication Type:
- Journal Article
- Citation:
- Applied Sciences (Switzerland), 2019, 9 (16)
- Issue Date:
- 2019-08-01
Open Access
Copyright Clearance Process
- Recently Added
- In Progress
- Open Access
This item is open access.
© 2019 by the authors. In relation to power converter design, power density is increasing while the form factor is decreasing. This trend generally reduces the rate of the cooling process, which increases the mutual thermal coupling among the surrounding power components. Most of the traditional models usually ignore the mutual effects or just focus on the conduction coupling. To deal with these factors, the thermal modeling for a boost converter system has been built to compare the junction temperatures (Tj) and the increments under different working conditions in order to consider the conduction coupling. A multi-variable thermal resistances model is proposed in this paper to incorporate the convection thermal coupling into the mutual thermal effects. The coupling resistances, MOSFET to the diode (Rcp-DM ⇀), and the diode to MOSFET (Rcp-DM ⇀) have been calculated and the relationships between coupling resistances and their impact factors (separation distances and working currents) have been discussed. New case temperatures (Tc) obtained by calculation and additional measurements at other separation distances serve to verify the efficacy of the proposed model. This model enhances the current thermal models and provides an effective method to calculate the thermal coupling resistances which can be used to estimate the Tj. As the coupling resistances are distance dependent, the model also helps to optimize and fine-tune the placements of components in high-power density converters.
Please use this identifier to cite or link to this item: