Design of miniaturized on-chip bandpass filters using inverting-coupled inductors in (Bi)-CMOS Technology

Zhu, H; Zhu, X; Yang, Y; Sun, Y

Design of miniaturized on-chip bandpass filters using inverting-coupled inductors in (Bi)-CMOS Technology

Zhu, H

Zhu, X

Yang, Y

Sun, Y

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Publication Type:: Journal Article
Citation:: IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, 67 (2), pp. 647 - 657
Issue Date:: 2020-02-01

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Field	Value	Language
dc.contributor.author	Zhu, H https://orcid.org/0000-0002-5157-8457	en_US
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X	en_US
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156	en_US
dc.contributor.author	Sun, Y	en_US
dc.date.issued	2020-02-01	en_US
dc.identifier.citation	IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, 67 (2), pp. 647 - 657	en_US
dc.identifier.issn	1549-8328	en_US
dc.identifier.uri	http://hdl.handle.net/10453/138666
dc.description.abstract	© 2004-2012 IEEE. In this work, a new type of miniaturized on-chip resonator using coupled-inductor structure is presented. The impact on resonances of the structure due to the use of non- inverting- and inverting-coupled configuration is extensively investigated. It has been found that using the inverting-coupled structure, a stronger resonance can be generated, which is ideally suitable for device miniaturization. To fully understand the working mechanism of the resonator and use it effectively for bandpass filter (BPF) design, simplified LC equivalent-circuit models and detailed theoretical analysis are provided. To further demonstrate the proposed concept is useful in practice, not only a 1st-order BPF, but also another two 2nd-order BPFs are designed and fabricated in a standard 0.13-μm (Bi)-CMOS technology. All of them are designed to have a centre frequency around 15 GHz. Their physical dimensions are 0.13 × 0.25 mm2, 0.26 × 0.25 mm2, 0.24 × 0.22 mm2, respectively. Good agreements between simulation and measurement have been obtained, which verify that the presented design approach is suitable for miniaturized on-chip passive design.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DE160101032
dc.relation.ispartof	IEEE Transactions on Circuits and Systems I: Regular Papers	en_US
dc.relation.isbasedon	10.1109/TCSI.2019.2948754	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Electrical & Electronic Engineering	en_US
dc.title	Design of miniaturized on-chip bandpass filters using inverting-coupled inductors in (Bi)-CMOS Technology	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	67	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
utslib.copyright.status	closed_access	*
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	67	en_US

Abstract:

© 2004-2012 IEEE. In this work, a new type of miniaturized on-chip resonator using coupled-inductor structure is presented. The impact on resonances of the structure due to the use of non- inverting- and inverting-coupled configuration is extensively investigated. It has been found that using the inverting-coupled structure, a stronger resonance can be generated, which is ideally suitable for device miniaturization. To fully understand the working mechanism of the resonator and use it effectively for bandpass filter (BPF) design, simplified LC equivalent-circuit models and detailed theoretical analysis are provided. To further demonstrate the proposed concept is useful in practice, not only a 1st-order BPF, but also another two 2nd-order BPFs are designed and fabricated in a standard 0.13-μm (Bi)-CMOS technology. All of them are designed to have a centre frequency around 15 GHz. Their physical dimensions are 0.13 × 0.25 mm2, 0.26 × 0.25 mm2, 0.24 × 0.22 mm2, respectively. Good agreements between simulation and measurement have been obtained, which verify that the presented design approach is suitable for miniaturized on-chip passive design.

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http://hdl.handle.net/10453/138666