Factors affecting the f× Q product of 3C-SiC microstrings: What is the upper limit for sensitivity?

Kermany, AR; Bennett, JS; Brawley, GA; Bowen, WP; Iacopi, F

Factors affecting the f× Q product of 3C-SiC microstrings: What is the upper limit for sensitivity?

Kermany, AR Bennett, JS Brawley, GA Bowen, WP Iacopi, F

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Publication Type:: Journal Article
Citation:: Journal of Applied Physics, 2016, 119 (5)
Issue Date:: 2016-01-01

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Field	Value	Language
dc.contributor.author	Kermany, AR	en_US
dc.contributor.author	Bennett, JS	en_US
dc.contributor.author	Brawley, GA	en_US
dc.contributor.author	Bowen, WP	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.date.issued	2016-01-01	en_US
dc.identifier.citation	Journal of Applied Physics, 2016, 119 (5)	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/10453/139256
dc.description.abstract	© 2016 AIP Publishing LLC. The fn×Q (Hz) is a crucial sensitivity parameter for micro-electro-mechanical sensing. We have recently shown a fn×Q product of ∼1012Hz for microstrings made of cubic silicon carbide on silicon, establishing a new state-of-the-art and opening new frontiers for mass sensing applications. In this work, we analyse the main parameters influencing the frequency and quality factor of silicon carbide microstrings (material properties, microstring geometry, clamping condition, and environmental pressure) and investigate the potential for approaching the theoretical upper limit. We indicate that our previous result is only about a factor 2 lower than the thermoelastic dissipation limit. For fully reaching this upper limit, a substantial reduction of the defects in the silicon carbide thin film would be required, while maintaining a high residual tensile stress in the perfect-clamped strings.	en_US
dc.relation.ispartof	Journal of Applied Physics	en_US
dc.relation.isbasedon	10.1063/1.4941274	en_US
dc.rights	The following article has been submitted to/accepted by [Journal of Applied Physics, 2016, 119 (5)l]. After it is published, it will be found at (https://aip.scitation.org/doi/10.1063/1.4941274).
dc.rights	info:eu-repo/semantics/openAccess
dc.subject.classification	Applied Physics	en_US
dc.title	Factors affecting the f× Q product of 3C-SiC microstrings: What is the upper limit for sensitivity?	en_US
dc.type	Journal Article
utslib.citation.volume	5	en_US
utslib.citation.volume	119	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	open_access	*
pubs.issue	5	en_US
pubs.publication-status	Published	en_US
pubs.volume	119	en_US

Abstract:

© 2016 AIP Publishing LLC. The fn×Q (Hz) is a crucial sensitivity parameter for micro-electro-mechanical sensing. We have recently shown a fn×Q product of ∼1012Hz for microstrings made of cubic silicon carbide on silicon, establishing a new state-of-the-art and opening new frontiers for mass sensing applications. In this work, we analyse the main parameters influencing the frequency and quality factor of silicon carbide microstrings (material properties, microstring geometry, clamping condition, and environmental pressure) and investigate the potential for approaching the theoretical upper limit. We indicate that our previous result is only about a factor 2 lower than the thermoelastic dissipation limit. For fully reaching this upper limit, a substantial reduction of the defects in the silicon carbide thin film would be required, while maintaining a high residual tensile stress in the perfect-clamped strings.

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http://hdl.handle.net/10453/139256