Erratum: Corrigendum to ''Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV'' [Carbon 68 (2014) 563-572]

Gupta, B Notarianni, M Mishra, N Shafiei, M Iacopi, F

Motta, N

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Field	Value	Language
dc.contributor.author	Gupta, B	en_US
dc.contributor.author	Notarianni, M	en_US
dc.contributor.author	Mishra, N	en_US
dc.contributor.author	Shafiei, M	en_US
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990	en_US
dc.contributor.author	Motta, N	en_US
dc.date.issued	2015-01-01	en_US
dc.identifier.citation	Carbon, 2015, 84 (1), pp. 280 - ?	en_US
dc.identifier.issn	0008-6223	en_US
dc.identifier.uri	http://hdl.handle.net/10453/139258
dc.relation.ispartof	Carbon	en_US
dc.relation.isbasedon	10.1016/j.carbon.2014.12.028	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Erratum: Corrigendum to ''Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV'' [Carbon 68 (2014) 563-572]	en_US
dc.type	Journal Article
utslib.citation.volume	1	en_US
utslib.citation.volume	84	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.issue	1	en_US
pubs.publication-status	Published	en_US
pubs.volume	84	en_US

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