Design of Self-Coupling Enhanced Resonator in 0.13-μm (Bi)-CMOS Technology

Bautista, M; Zhu, H; Zhu, X; Yang, Y

Design of Self-Coupling Enhanced Resonator in 0.13-μm (Bi)-CMOS Technology

Bautista, M Zhu, H

Zhu, X

Yang, Y

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Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings, 2020, pp. 1-27
Issue Date:: 2020

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Field	Value	Language
dc.contributor.author	Bautista, M
dc.contributor.author	Zhu, H https://orcid.org/0000-0002-5157-8457
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.contributor.author	Yang, Y https://orcid.org/0000-0001-7439-2156
dc.date	2019-05-19
dc.date.accessioned	2020-09-17T18:50:25Z
dc.date.available	2020-09-17T18:50:25Z
dc.date.issued	2020
dc.identifier.citation	2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings, 2020, pp. 1-27
dc.identifier.isbn	9781728121680
dc.identifier.uri	http://hdl.handle.net/10453/142721
dc.description.abstract	© 2019 IEEE. Design of a compact on-chip resonator operating at mm-wave region is presented in this paper. Unlike the previously published ones in the literature, this work is implemented using a planar structure, which requires no broadside coupling. Instead, the resonance is generated through enhanced self-coupling. To further demonstrate the feasibility of using this approach in practice, the designed resonator is fabricated in a standard 0.13- mumathrm{m} (Bi)-CMOS technology. The measured results show that it can generate a notch at 47 GHz with the attenuation better than 28 dB due to the enhanced self-resonant frequency. The chip size, excluding the pads, is only 0.096times 0.294 text{mm}{2}.
dc.language	en
dc.publisher	IEEE
dc.relation.ispartof	2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings
dc.relation.ispartof	International Conference on Microwave and Millimeter Wave Technology
dc.relation.isbasedon	10.1109/ICMMT45702.2019.8992511
dc.rights	info:eu-repo/semantics/closedAccess
dc.rights	© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.	en_US
dc.title	Design of Self-Coupling Enhanced Resonator in 0.13-μm (Bi)-CMOS Technology
dc.type	Conference Proceeding
utslib.location.activity	Guangzhou, China
pubs.organisational-group	/University of Technology Sydney/DVC (Research)
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2020-09-17T18:50:21Z
pubs.finish-date	2019-05-22
pubs.place-of-publication	Piscataway, USA
pubs.publication-status	Published
pubs.start-date	2019-05-19
dc.location	Piscataway, USA

Abstract:

© 2019 IEEE. Design of a compact on-chip resonator operating at mm-wave region is presented in this paper. Unlike the previously published ones in the literature, this work is implemented using a planar structure, which requires no broadside coupling. Instead, the resonance is generated through enhanced self-coupling. To further demonstrate the feasibility of using this approach in practice, the designed resonator is fabricated in a standard 0.13- mumathrm{m} (Bi)-CMOS technology. The measured results show that it can generate a notch at 47 GHz with the attenuation better than 28 dB due to the enhanced self-resonant frequency. The chip size, excluding the pads, is only 0.096times 0.294 text{mm}{2}.

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http://hdl.handle.net/10453/142721