Characteristics of Dual-Gate Graphene Thermoelectric Devices Based on Voltage Regulation

Wang, N; Ma, Z; Ding, C; Jia, H; Sui, G; Gao, X

Characteristics of Dual-Gate Graphene Thermoelectric Devices Based on Voltage Regulation

Wang, N Ma, Z Ding, C

Jia, H Sui, G Gao, X

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Publisher:: Wiley
Publication Type:: Journal Article
Citation:: Energy Technology, 2020, 8, (7), pp. 1901466-1901466
Issue Date:: 2020-07-01

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Field	Value	Language
dc.contributor.author	Wang, N
dc.contributor.author	Ma, Z
dc.contributor.author	Ding, C https://orcid.org/0000-0002-2629-1657
dc.contributor.author	Jia, H
dc.contributor.author	Sui, G
dc.contributor.author	Gao, X
dc.date.accessioned	2020-11-07T21:38:05Z
dc.date.available	2020-11-07T21:38:05Z
dc.date.issued	2020-07-01
dc.identifier.citation	Energy Technology, 2020, 8, (7), pp. 1901466-1901466
dc.identifier.issn	2194-4288
dc.identifier.issn	2194-4296
dc.identifier.uri	http://hdl.handle.net/10453/143836
dc.description.abstract	© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The bandgap, the carrier concentration, and the polarity in graphene can all be controlled by gate voltage, which provides a new opportunity for the study of the regulation of thermoelectric devices. Herein, a dual-gate thermoelectric device model for graphene with top-gate and back-gate structures is proposed. Based on the influence of gate voltage on carrier concentration and the Fermi level, the relationship between the gate voltage and the channel resistance, the Seebeck coefficient, and the conductivity of dual-gate graphene, thermoelectric devices are established according to the mechanism of carrier transport. The results demonstrate that the optimal voltage window of the Seebeck coefficient, conductivity, and power factor is obtained independently. Compared with the conventional graphene thermoelectric device without the top-gate structure, the Seebeck coefficient and the power factor for the proposed dual-gate structure are increased twofold and tenfold, respectively. Herein, a new approach is provided for high-performance thermoelectric device designs with accurate regulation.
dc.language	en
dc.publisher	Wiley
dc.relation.ispartof	Energy Technology
dc.relation.isbasedon	10.1002/ente.201901466
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0904 Chemical Engineering, 0906 Electrical and Electronic Engineering, 0912 Materials Engineering
dc.title	Characteristics of Dual-Gate Graphene Thermoelectric Devices Based on Voltage Regulation
dc.type	Journal Article
utslib.citation.volume	8
utslib.for	0904 Chemical Engineering
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	0912 Materials Engineering
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	closed_access	*
dc.date.updated	2020-11-07T21:37:58Z
pubs.issue	7
pubs.publication-status	Published
pubs.volume	8
utslib.citation.issue	7

Abstract:

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The bandgap, the carrier concentration, and the polarity in graphene can all be controlled by gate voltage, which provides a new opportunity for the study of the regulation of thermoelectric devices. Herein, a dual-gate thermoelectric device model for graphene with top-gate and back-gate structures is proposed. Based on the influence of gate voltage on carrier concentration and the Fermi level, the relationship between the gate voltage and the channel resistance, the Seebeck coefficient, and the conductivity of dual-gate graphene, thermoelectric devices are established according to the mechanism of carrier transport. The results demonstrate that the optimal voltage window of the Seebeck coefficient, conductivity, and power factor is obtained independently. Compared with the conventional graphene thermoelectric device without the top-gate structure, the Seebeck coefficient and the power factor for the proposed dual-gate structure are increased twofold and tenfold, respectively. Herein, a new approach is provided for high-performance thermoelectric device designs with accurate regulation.

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http://hdl.handle.net/10453/143836