MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors.

Amjadipour, M; Bradford, J; Zebardastan, N; Motta, N; Iacopi, F

MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors.

Amjadipour, M Bradford, J Zebardastan, N Motta, N Iacopi, F

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Publisher:: IOP Publishing
Publication Type:: Journal Article
Citation:: Nanotechnology, 2021
Issue Date:: 2021-02

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Field	Value	Language
dc.contributor.author	Amjadipour, M
dc.contributor.author	Bradford, J
dc.contributor.author	Zebardastan, N
dc.contributor.author	Motta, N
dc.contributor.author	Iacopi, F https://orcid.org/0000-0002-3196-0990
dc.date.accessioned	2021-02-10T00:57:05Z
dc.date.available	2021-02-10T00:57:05Z
dc.date.issued	2021-02
dc.identifier.citation	Nanotechnology, 2021
dc.identifier.issn	0957-4484
dc.identifier.issn	1361-6528
dc.identifier.uri	http://hdl.handle.net/10453/146010
dc.description.abstract	The potential of transition metal dichalcogenides such as MoS2 for energy storage has been significantly limited so far by the lack of conductivity and structural stability. Employing highly conductive, graphitic materials in combination with transition metal dichalcogenides can address this gap. Here, we explore the use of a layered electrode structure for solid-state supercapacitors, made of MoS2 and epitaxial graphene on cubic silicon carbide for on-silicon energy storage. We show that the energy storage of the solid-state supercapacitors can be significantly increased by creating layered MoS2/graphene electrodes, yielding a substantial improvement as compared to electrodes using either epitaxial graphene or MoS2 alone. We conclude that the conductivity of epitaxial graphene and the growth morphology of MoS2 on graphene play an enabling role in the successful use of transition metal dichalcogenides for on-chip energy storage.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	IOP Publishing
dc.relation.ispartof	Nanotechnology
dc.relation.isbasedon	http://dx.doi.org/10.1088/1361-6528/abe1f1
dc.rights	'This is an author-created, un-copyedited version of an article accepted for publication in [Nanotechnology]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online at https://iopscience.iop.org/article/10.1088/1361-6528/abe1f1].'
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online at http://dx.doi.org/10.1088/1361-6528/abe1f1.	en_US
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors.
dc.type	Journal Article
utslib.location.activity	England
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	open_access	*
dc.date.updated	2021-02-10T00:56:52Z
pubs.publication-status	Published

Abstract:

The potential of transition metal dichalcogenides such as MoS2 for energy storage has been significantly limited so far by the lack of conductivity and structural stability. Employing highly conductive, graphitic materials in combination with transition metal dichalcogenides can address this gap. Here, we explore the use of a layered electrode structure for solid-state supercapacitors, made of MoS2 and epitaxial graphene on cubic silicon carbide for on-silicon energy storage. We show that the energy storage of the solid-state supercapacitors can be significantly increased by creating layered MoS2/graphene electrodes, yielding a substantial improvement as compared to electrodes using either epitaxial graphene or MoS2 alone. We conclude that the conductivity of epitaxial graphene and the growth morphology of MoS2 on graphene play an enabling role in the successful use of transition metal dichalcogenides for on-chip energy storage.

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http://hdl.handle.net/10453/146010