A Monolithically Integrated Single-Input Load-Modulated Balanced Amplifier With Enhanced Efficiency at Power Back-Off

Chen, L; Liu, H; Hora, J; Zhang, JA; Yeo, KS; Zhu, X

A Monolithically Integrated Single-Input Load-Modulated Balanced Amplifier With Enhanced Efficiency at Power Back-Off

Chen, L Liu, H Hora, J

Zhang, JA Yeo, KS Zhu, X

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Publisher:: Institute of Electrical and Electronics Engineers (IEEE)
Publication Type:: Journal Article
Citation:: IEEE Journal of Solid-State Circuits, 2021, PP, (99), pp. 1-1
Issue Date:: 2021-01-01

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Field	Value	Language
dc.contributor.author	Chen, L
dc.contributor.author	Liu, H
dc.contributor.author	Hora, J https://orcid.org/0000-0001-9323-1518
dc.contributor.author	Zhang, JA
dc.contributor.author	Yeo, KS
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.date.accessioned	2021-04-24T15:32:36Z
dc.date.available	2021-04-24T15:32:36Z
dc.date.issued	2021-01-01
dc.identifier.citation	IEEE Journal of Solid-State Circuits, 2021, PP, (99), pp. 1-1
dc.identifier.issn	0018-9200
dc.identifier.issn	1558-173X
dc.identifier.uri	http://hdl.handle.net/10453/148328
dc.description.abstract	In this article, the design of a power amplifier (PA) using a simple but effective architecture, namely, load-modulated balanced amplifier (LMBA), is presented. Using this architecture for PA design, it can achieve not only a relatively high saturated output power but also an excellent efficiency enhancement at the power back-off (PBO) region. To prove that the presented approach is feasible in practice, a PA is designed in a 1-μm gallium arsenide (GaAs) HBT process. Operating under a 5-V power supply, the PA can deliver more than 31-dBm saturated output power with 36% collector efficiency (CE) at 5 GHz. Moreover, it also achieves 1.2 and 1.23 times CE enhancement over an idealistic Class-B PA at 6- and 9-dB PBO levels, respectively. Finally, the designed PA supports 64-quadrature amplitude modulation (QAM) with 80 Msys/s at 22-dBm average output power while still maintaining an error vector magnitude (EVM) and adjacent channel power ratio (ACPR) better than -29.5 dB and -29.4 dBc, respectively.
dc.language	en
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation	http://purl.org/au-research/grants/arc/DE160101032
dc.relation.ispartof	IEEE Journal of Solid-State Circuits
dc.relation.isbasedon	10.1109/JSSC.2020.3048715
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0204 Condensed Matter Physics, 0906 Electrical and Electronic Engineering, 1099 Other Technology
dc.subject.classification	Electrical & Electronic Engineering
dc.title	A Monolithically Integrated Single-Input Load-Modulated Balanced Amplifier With Enhanced Efficiency at Power Back-Off
dc.type	Journal Article
utslib.citation.volume	PP
utslib.for	0204 Condensed Matter Physics
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	1099 Other Technology
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2021-04-24T15:32:34Z
pubs.issue	99
pubs.publication-status	Published
pubs.volume	PP
utslib.citation.issue	99

Abstract:

In this article, the design of a power amplifier (PA) using a simple but effective architecture, namely, load-modulated balanced amplifier (LMBA), is presented. Using this architecture for PA design, it can achieve not only a relatively high saturated output power but also an excellent efficiency enhancement at the power back-off (PBO) region. To prove that the presented approach is feasible in practice, a PA is designed in a 1-μm gallium arsenide (GaAs) HBT process. Operating under a 5-V power supply, the PA can deliver more than 31-dBm saturated output power with 36% collector efficiency (CE) at 5 GHz. Moreover, it also achieves 1.2 and 1.23 times CE enhancement over an idealistic Class-B PA at 6- and 9-dB PBO levels, respectively. Finally, the designed PA supports 64-quadrature amplitude modulation (QAM) with 80 Msys/s at 22-dBm average output power while still maintaining an error vector magnitude (EVM) and adjacent channel power ratio (ACPR) better than -29.5 dB and -29.4 dBc, respectively.

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http://hdl.handle.net/10453/148328