Simplified over-temperature protection circuit structure for WSN/IoT device power management

Hora, JA; Zhu, X; Dutkiewicz, E

Simplified over-temperature protection circuit structure for WSN/IoT device power management

Hora, JA Zhu, X Dutkiewicz, E

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Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: Proceedings of the International Conference on Sensing Technology, ICST, 2020, 2019-December, pp. 1-4
Issue Date:: 2020

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Field	Value	Language
dc.contributor.author	Hora, JA
dc.contributor.author	Zhu, X
dc.contributor.author	Dutkiewicz, E https://orcid.org/0000-0002-4268-9286
dc.date	2019-12-02
dc.date.accessioned	2021-04-24T15:39:12Z
dc.date.available	2021-04-24T15:39:12Z
dc.date.issued	2020
dc.identifier.citation	Proceedings of the International Conference on Sensing Technology, ICST, 2020, 2019-December, pp. 1-4
dc.identifier.isbn	9781728146317
dc.identifier.issn	2156-8065
dc.identifier.issn	2156-8073
dc.identifier.uri	http://hdl.handle.net/10453/148330
dc.description.abstract	© 2019 IEEE. This paper presents a modified structure of the over-temperature protective circuit integrated into the power management converter design for wireless sensor node devices. The design is focused on realizing a simplified circuit structure that is compatible with standard CMOS technology structure and evaluating the over-temperature threshold to assure needed accuracy. HSPICE simulation using Monte Carlo Analysis for the bandgap voltage reference is used to get a better estimation, process variation, and reliability. The target design temperature threshold is obtained at approximately 150 °C, which is the standard chip testing value at worst temperature consideration. Post-layout simulation of the proposed circuit design structure is carried out using 65nm 1P9M CMOS 1.2V/2.5V logic CMOS technology. And it is co-integrated in the power management circuit design for the system-on-chip wireless sensor node device.
dc.language	en
dc.publisher	IEEE
dc.relation.ispartof	Proceedings of the International Conference on Sensing Technology, ICST
dc.relation.ispartof	International Conference on Sensing Technology
dc.relation.isbasedon	10.1109/ICST46873.2019.9047726
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Simplified over-temperature protection circuit structure for WSN/IoT device power management
dc.type	Conference Proceeding
utslib.citation.volume	2019-December
utslib.location.activity	Sydney, Australia,
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2021-04-24T15:39:11Z
pubs.finish-date	2019-12-04
pubs.place-of-publication	Piscataway, USA
pubs.publication-status	Published
pubs.start-date	2019-12-02
pubs.volume	2019-December
dc.location	Piscataway, USA

Abstract:

© 2019 IEEE. This paper presents a modified structure of the over-temperature protective circuit integrated into the power management converter design for wireless sensor node devices. The design is focused on realizing a simplified circuit structure that is compatible with standard CMOS technology structure and evaluating the over-temperature threshold to assure needed accuracy. HSPICE simulation using Monte Carlo Analysis for the bandgap voltage reference is used to get a better estimation, process variation, and reliability. The target design temperature threshold is obtained at approximately 150 °C, which is the standard chip testing value at worst temperature consideration. Post-layout simulation of the proposed circuit design structure is carried out using 65nm 1P9M CMOS 1.2V/2.5V logic CMOS technology. And it is co-integrated in the power management circuit design for the system-on-chip wireless sensor node device.

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http://hdl.handle.net/10453/148330