A 60 GHz 8-Way Combined Power Amplifier in 0.18 &amp;#x03BC;m SiGe BiCMOS

Liu, H; Zhu, X; Wang, Y; Men, K; Yeo, KS

A 60 GHz 8-Way Combined Power Amplifier in 0.18 &#x03BC;m SiGe BiCMOS

Liu, H Zhu, X

Wang, Y Men, K Yeo, KS

Permalink

Publisher:: Institute of Electrical and Electronics Engineers
Publication Type:: Journal Article
Citation:: IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68, (6), pp. 1847-1851
Issue Date:: 2021

Closed Access

	Filename	Description	Size
	A_60_GHz_8-Way_Combined_Power_Amplifier_in_0.18_m_SiGe_BiCMOS.pdf	Published version	2.16 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Liu, H
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.contributor.author	Wang, Y
dc.contributor.author	Men, K
dc.contributor.author	Yeo, KS
dc.date.accessioned	2021-09-22T23:40:25Z
dc.date.available	2021-09-22T23:40:25Z
dc.date.issued	2021
dc.identifier.citation	IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68, (6), pp. 1847-1851
dc.identifier.issn	1549-7747
dc.identifier.issn	1558-3791
dc.identifier.uri	http://hdl.handle.net/10453/150666
dc.description.abstract	IEEE A 60 GHz fully-integrated 8-way combined power amplifier (PA) is developed in a standard 0.18 μm SiGe BiCMOS technology. The 8-way power splitter and combiner are co-optimized with transformer based baluns inside the eight differential PA cells, and hence resulting in minimum loss and high gain, linearity and efficiency. The measurement shows that the PA can achieve a gain of 22.2 dB around 60 GHz and 3-dB bandwidth from 53.5 GHz to 66.5 GHz, which covers all the channels specified in IEEE 802.11ad standard. It also attains a 1-dB power compression point (P1dB) of 21.8 dBm and saturated output power (PSAT) of 22.6 dBm, with power-added-efficiency of 10.7% and 12%, respectively.
dc.language	English
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation.ispartof	IEEE Transactions on Circuits and Systems II: Express Briefs
dc.relation.isbasedon	10.1109/TCSII.2020.3046512
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.subject.classification	Electrical & Electronic Engineering
dc.title	A 60 GHz 8-Way Combined Power Amplifier in 0.18 &#x03BC;m SiGe BiCMOS
dc.type	Journal Article
utslib.citation.volume	68
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2021-09-22T23:40:23Z
pubs.issue	6
pubs.publication-status	Published
pubs.volume	68
utslib.citation.issue	6

Abstract:

IEEE A 60 GHz fully-integrated 8-way combined power amplifier (PA) is developed in a standard 0.18 μm SiGe BiCMOS technology. The 8-way power splitter and combiner are co-optimized with transformer based baluns inside the eight differential PA cells, and hence resulting in minimum loss and high gain, linearity and efficiency. The measurement shows that the PA can achieve a gain of 22.2 dB around 60 GHz and 3-dB bandwidth from 53.5 GHz to 66.5 GHz, which covers all the channels specified in IEEE 802.11ad standard. It also attains a 1-dB power compression point (P1dB) of 21.8 dBm and saturated output power (PSAT) of 22.6 dBm, with power-added-efficiency of 10.7% and 12%, respectively.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/150666

A 60 GHz 8-Way Combined Power Amplifier in 0.18 &amp;#x03BC;m SiGe BiCMOS

A 60 GHz 8-Way Combined Power Amplifier in 0.18 μm SiGe BiCMOS