Exploiting Parasitic Capacitances in 3-D Inductors to Design RF CMOS Quasi-Elliptic-Type Broad-Band Bandpass Filters
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)
- Publication Type:
- Journal Article
- Citation:
- IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68, (9), pp. 3128-3132
- Issue Date:
- 2021-09-01
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| Filename | Description | Size | |||
|---|---|---|---|---|---|
| Exploiting_Parasitic_Capacitances_in_3-D_Inductors_to_Design_RF_CMOS_Quasi-Elliptic-Type_Broad-Band_Bandpass_Filters.pdf | Published version | 1.39 MB |
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A class of RF broad-band bandpass filter (BPF) with quasi-elliptic-type response in low-cost bulk CMOS technology is reported. It is based on the in-series cascade connection of lowpass and highpass filtering stages with 3-D inductors, whose parasitic capacitances are properly exploited. Specifically, they are used to transform the basic inductor into an LC tank, thus allowing to generate an upper transmission zero (TZ) that increases filtering selectivity and out-of-band power-rejection levels in a spurious-free/extended upper stopband. The layout of a basic third-order BPF cell shaped by four 3-D inductors and its lossless equivalent lumped-element circuit are detailed. By means of this lossless equivalent lumped-element model, its scalability to higher-order BPF designs by in-series cascading various BPF-cell replicas is also demonstrated. For experimental-validation purposes, an on-chip RF CMOS BPF prototype with 11-GHz center frequency and 68.5% 3-dB fractional bandwidth is developed using a 0.13- \mu \text{m} bulk CMOS technology. According to the measured results, it shows an upper stopband with minimum attenuation of 31.7 dB from 22.5 GHz to 67 GHz, alongside with TZs at 3.5 GHz and 22.5 GHz to produce sharp-rejection filtering.
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