Millimeter-Wave Wide-Band Bandpass Filter in CMOS Technology Using a Two-Layered Highpass-Type Approach with Embedded Upper Stopband

Ge, Z; Chen, L; Gomez-Garcia, R; Zhu, X

Millimeter-Wave Wide-Band Bandpass Filter in CMOS Technology Using a Two-Layered Highpass-Type Approach with Embedded Upper Stopband

Ge, Z Chen, L

Gomez-Garcia, R Zhu, X

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Publisher:: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Publication Type:: Journal Article
Citation:: IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68, (5), pp. 1586-1590
Issue Date:: 2021-05-01

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Field	Value	Language
dc.contributor.author	Ge, Z
dc.contributor.author	Chen, L https://orcid.org/0000-0002-1354-2824
dc.contributor.author	Gomez-Garcia, R
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.date.accessioned	2022-05-11T06:13:01Z
dc.date.available	2022-05-11T06:13:01Z
dc.date.issued	2021-05-01
dc.identifier.citation	IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68, (5), pp. 1586-1590
dc.identifier.issn	1549-7747
dc.identifier.issn	1558-3791
dc.identifier.uri	http://hdl.handle.net/10453/157236
dc.description.abstract	An on-chip millimeter-wave (mm-wave) broad-band bandpass filter (BPF) developed in bulk CMOS technology is reported. It is based on a two-layered implementation in which the circuit structure patterned in the top layer exhibits a highpass-type filtering response, whereas an upper stopband is created by the bottom-layer cell when coupled to the top-layer one to obtain a composite overall quasi-elliptic-type wide-band BPF functionality. The locations of the transmission zeros (TZs), which confer sharp-rejection capabilities to the overall frequency response, can be flexibly adjusted with the values of the capacitors that are employed in both layers. A simplified equivalent lumped-element circuit model of the proposed wide-band BPF approach is provided and applied to multi-stage BPF arrangements for higher-selectivity designs. Furthermore, for practical-demonstration purposes, an on-chip passive-integrated single-stage broad-band BPF prototype on silicon with 34.5-GHz center frequency and 61.2% 3-dB relative bandwidth is designed, manufactured, and characterized.
dc.language	English
dc.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.relation.ispartof	IEEE Transactions on Circuits and Systems II: Express Briefs
dc.relation.isbasedon	10.1109/TCSII.2021.3064387
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.subject.classification	Electrical & Electronic Engineering
dc.title	Millimeter-Wave Wide-Band Bandpass Filter in CMOS Technology Using a Two-Layered Highpass-Type Approach with Embedded Upper Stopband
dc.type	Journal Article
utslib.citation.volume	68
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2022-05-11T06:12:59Z
pubs.issue	5
pubs.publication-status	Published
pubs.volume	68
utslib.citation.issue	5

Abstract:

An on-chip millimeter-wave (mm-wave) broad-band bandpass filter (BPF) developed in bulk CMOS technology is reported. It is based on a two-layered implementation in which the circuit structure patterned in the top layer exhibits a highpass-type filtering response, whereas an upper stopband is created by the bottom-layer cell when coupled to the top-layer one to obtain a composite overall quasi-elliptic-type wide-band BPF functionality. The locations of the transmission zeros (TZs), which confer sharp-rejection capabilities to the overall frequency response, can be flexibly adjusted with the values of the capacitors that are employed in both layers. A simplified equivalent lumped-element circuit model of the proposed wide-band BPF approach is provided and applied to multi-stage BPF arrangements for higher-selectivity designs. Furthermore, for practical-demonstration purposes, an on-chip passive-integrated single-stage broad-band BPF prototype on silicon with 34.5-GHz center frequency and 61.2% 3-dB relative bandwidth is designed, manufactured, and characterized.

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http://hdl.handle.net/10453/157236