On-Chip Millimeter-Wave Integrated Absorptive Bandstop Filter in (Bi)-CMOS Technology

Ge, Z; Chen, L; Yang, L; Gomez-Garcia, R; Zhu, X

On-Chip Millimeter-Wave Integrated Absorptive Bandstop Filter in (Bi)-CMOS Technology

Ge, Z Chen, L

Yang, L Gomez-Garcia, R Zhu, X

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Publisher:: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Publication Type:: Journal Article
Citation:: IEEE Electron Device Letters, 2021, 42, (1), pp. 114-117
Issue Date:: 2021-01-01

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Field	Value	Language
dc.contributor.author	Ge, Z
dc.contributor.author	Chen, L https://orcid.org/0000-0002-1354-2824
dc.contributor.author	Yang, L
dc.contributor.author	Gomez-Garcia, R
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.date.accessioned	2022-05-19T03:28:29Z
dc.date.available	2022-05-19T03:28:29Z
dc.date.issued	2021-01-01
dc.identifier.citation	IEEE Electron Device Letters, 2021, 42, (1), pp. 114-117
dc.identifier.issn	0741-3106
dc.identifier.issn	1558-0563
dc.identifier.uri	http://hdl.handle.net/10453/157521
dc.description.abstract	A millimeter-wave passive-integrated bandstop filter (BSF) with absorptive/reflectionless behavior is reported. It avoids the creation of RF-power reflections for filtered signals which can deteriorate earlier active stages in integrated RF front-end chains. It exploits a two-path transversal configuration in a multi-layer structure. Specifically, it is composed of a direct transmission line for the main path (top layer) and two lossy edge-grounded spiral-shaped resonators for the secondary path (bottom layer) that are coupled between them and to the main path. Thus, a sharp second-order stopband is created through destructive signal-interference effects between the two signal paths with intrinsic RF-power absorption within the volume of the lossy resonators. As practical validation, a 24.5-GHz on-chip millimeter-wave absorptive BSF circuit is built in a 0.13- μm SiGe bipolar complementary metal-oxide-semiconductor [(Bi)-CMOS] technology and tested. Close agreement between simulated and measured results for this on-chip BSF circuit is achieved.
dc.language	English
dc.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.relation.ispartof	IEEE Electron Device Letters
dc.relation.isbasedon	10.1109/LED.2020.3036036
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.subject.classification	Applied Physics
dc.title	On-Chip Millimeter-Wave Integrated Absorptive Bandstop Filter in (Bi)-CMOS Technology
dc.type	Journal Article
utslib.citation.volume	42
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2022-05-19T03:28:27Z
pubs.issue	1
pubs.publication-status	Published
pubs.volume	42
utslib.citation.issue	1

Abstract:

A millimeter-wave passive-integrated bandstop filter (BSF) with absorptive/reflectionless behavior is reported. It avoids the creation of RF-power reflections for filtered signals which can deteriorate earlier active stages in integrated RF front-end chains. It exploits a two-path transversal configuration in a multi-layer structure. Specifically, it is composed of a direct transmission line for the main path (top layer) and two lossy edge-grounded spiral-shaped resonators for the secondary path (bottom layer) that are coupled between them and to the main path. Thus, a sharp second-order stopband is created through destructive signal-interference effects between the two signal paths with intrinsic RF-power absorption within the volume of the lossy resonators. As practical validation, a 24.5-GHz on-chip millimeter-wave absorptive BSF circuit is built in a 0.13- μm SiGe bipolar complementary metal-oxide-semiconductor [(Bi)-CMOS] technology and tested. Close agreement between simulated and measured results for this on-chip BSF circuit is achieved.

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http://hdl.handle.net/10453/157521