Small signal model and analog performance analysis of negative capacitance FETs

Eslahi, H; Hamilton, TJ; Khandelwal, S

Small signal model and analog performance analysis of negative capacitance FETs

Eslahi, H Hamilton, TJ Khandelwal, S

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Publisher:: Elsevier
Publication Type:: Journal Article
Citation:: Solid-State Electronics, 2021, 186, pp. 1-7
Issue Date:: 2021-12-01

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Field	Value	Language
dc.contributor.author	Eslahi, H
dc.contributor.author	Hamilton, TJ
dc.contributor.author	Khandelwal, S
dc.date.accessioned	2022-05-20T02:48:41Z
dc.date.available	2022-05-20T02:48:41Z
dc.date.issued	2021-12-01
dc.identifier.citation	Solid-State Electronics, 2021, 186, pp. 1-7
dc.identifier.issn	0038-1101
dc.identifier.issn	1879-2405
dc.identifier.uri	http://hdl.handle.net/10453/157548
dc.description.abstract	In this paper, a small-signal model of Negative Capacitance FETs (NCFETs) is developed and the analog performance of NCFETs is studied using the developed model. A new ferroelectric factor K is introduced to capture the ferroelectric gain in NCFETs as compared to traditional small signal MOSFET/FinFET models. Using our new NCFET small-signal model, we show analog design trade-offs between various analog benchmarks such as gain, bandwidth, cut-off frequency, and linearity. Additionally, the developed model is used to demonstrate trade-offs in NCFET analog performance as ferroelectric parameters are changed. Results show that if pushed for a higher intrinsic gain via thicker Fe layers in NCFETs, the linearity of the device suffers. This reveals inherent device level trade-off in NCFETs for analog circuit performance.
dc.language	English
dc.publisher	Elsevier
dc.relation.ispartof	Solid-State Electronics
dc.relation.isbasedon	10.1016/j.sse.2021.108161
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0204 Condensed Matter Physics, 0205 Optical Physics, 0906 Electrical and Electronic Engineering
dc.subject.classification	Applied Physics
dc.title	Small signal model and analog performance analysis of negative capacitance FETs
dc.type	Journal Article
utslib.citation.volume	186
utslib.for	0204 Condensed Matter Physics
utslib.for	0205 Optical Physics
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2022-05-20T02:48:38Z
pubs.publication-status	Published
pubs.volume	186

Abstract:

In this paper, a small-signal model of Negative Capacitance FETs (NCFETs) is developed and the analog performance of NCFETs is studied using the developed model. A new ferroelectric factor K is introduced to capture the ferroelectric gain in NCFETs as compared to traditional small signal MOSFET/FinFET models. Using our new NCFET small-signal model, we show analog design trade-offs between various analog benchmarks such as gain, bandwidth, cut-off frequency, and linearity. Additionally, the developed model is used to demonstrate trade-offs in NCFET analog performance as ferroelectric parameters are changed. Results show that if pushed for a higher intrinsic gain via thicker Fe layers in NCFETs, the linearity of the device suffers. This reveals inherent device level trade-off in NCFETs for analog circuit performance.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/157548