Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT

Hodges, J; Albahrani, SA; Schwitter, B; Khandelwal, S

Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT

Hodges, J Albahrani, SA Schwitter, B

Khandelwal, S

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Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2021 IEEE MTT-S International Microwave Symposium (IMS), 2021, 2021-June, pp. 349-351
Issue Date:: 2021-10-27

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Field	Value	Language
dc.contributor.author	Hodges, J
dc.contributor.author	Albahrani, SA
dc.contributor.author	Schwitter, B https://orcid.org/0000-0003-3203-8639
dc.contributor.author	Khandelwal, S
dc.date	2021-06-07
dc.date.accessioned	2022-06-05T21:56:55Z
dc.date.available	2022-06-05T21:56:55Z
dc.date.issued	2021-10-27
dc.identifier.citation	2021 IEEE MTT-S International Microwave Symposium (IMS), 2021, 2021-June, pp. 349-351
dc.identifier.isbn	9781665403078
dc.identifier.issn	0149-645X
dc.identifier.uri	http://hdl.handle.net/10453/157938
dc.description.abstract	This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN power amplifier design using the new industry standard ASM-HEMT compact model. A novel methodology combining the effectiveness and accuracy of modeling the intrinsic device region with ASM-HEMT, and distributed effects at Ka-band with electromagnetic (EM) simulations is developed. The intrinsic semiconductor region for each finger of the GaN HEMT device is modeled with ASM-HEMT, and in a multi-finger device, the single finger model is coupled with EM simulations capturing distributed effects accurately. The developed non-linear model shows excellent accuracy with measured non-linear data for a commercial GaN-HEMT device, and with measurements performed on a Ka-band MMIC power amplifier.
dc.language	en
dc.publisher	IEEE
dc.relation.ispartof	2021 IEEE MTT-S International Microwave Symposium (IMS)
dc.relation.ispartof	2021 IEEE MTT-S International Microwave Symposium
dc.relation.isbasedon	10.1109/ims19712.2021.9574979
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT
dc.type	Conference Proceeding
utslib.citation.volume	2021-June
utslib.location.activity	Atlanta, GA, USA
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2022-06-05T21:56:52Z
pubs.finish-date	2021-06-25
pubs.publication-status	Published
pubs.start-date	2021-06-07
pubs.volume	2021-June

Abstract:

This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN power amplifier design using the new industry standard ASM-HEMT compact model. A novel methodology combining the effectiveness and accuracy of modeling the intrinsic device region with ASM-HEMT, and distributed effects at Ka-band with electromagnetic (EM) simulations is developed. The intrinsic semiconductor region for each finger of the GaN HEMT device is modeled with ASM-HEMT, and in a multi-finger device, the single finger model is coupled with EM simulations capturing distributed effects accurately. The developed non-linear model shows excellent accuracy with measured non-linear data for a commercial GaN-HEMT device, and with measurements performed on a Ka-band MMIC power amplifier.

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http://hdl.handle.net/10453/157938