Design of Broadband Low-Noise Amplifier in 45-nm SOI Technology

Guo, G; Zhang, C; He, W; Zhu, X

Design of Broadband Low-Noise Amplifier in 45-nm SOI Technology

Guo, G Zhang, C He, W Zhu, X

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Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT), 2021, 00, pp. 1-3
Issue Date:: 2021-10-25

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Field	Value	Language
dc.contributor.author	Guo, G
dc.contributor.author	Zhang, C
dc.contributor.author	He, W
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.date	2021-09-13
dc.date.accessioned	2022-06-09T00:17:00Z
dc.date.available	2022-06-09T00:17:00Z
dc.date.issued	2021-10-25
dc.identifier.citation	2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT), 2021, 00, pp. 1-3
dc.identifier.isbn	9781665438537
dc.identifier.uri	http://hdl.handle.net/10453/158027
dc.description.abstract	This paper presents a 28–38 GHz wideband low-noise amplifier (LNA) with minimum noise figure of 2.8 dB. The amplifier consists of a two-stage cascade design. By using a transformer circuit as its matching network, the LNA achieved a wideband performance. The LNA was designed in 45 nm CMOS SOI technology, achieving a maximum voltage gain of 20 dB and a maximum power gain of 23 dB with a 3dB bandwidth of 28–38 GHz, and a noise figure less than 3.8 dB in the band. At a supply voltage of 1.5V, the DC power consumption was only 20 mW.
dc.language	en
dc.publisher	IEEE
dc.relation	Department of Industry, Innovation and Science
dc.relation.ispartof	2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)
dc.relation.ispartof	2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies
dc.relation.isbasedon	10.1109/ucmmt53364.2021.9569903
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Design of Broadband Low-Noise Amplifier in 45-nm SOI Technology
dc.type	Conference Proceeding
utslib.citation.volume	00
utslib.location.activity	Lancaster, United Kingdom
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
dc.date.updated	2022-06-09T00:16:59Z
pubs.finish-date	2021-09-15
pubs.publication-status	Published
pubs.start-date	2021-09-13
pubs.volume	00

Abstract:

This paper presents a 28–38 GHz wideband low-noise amplifier (LNA) with minimum noise figure of 2.8 dB. The amplifier consists of a two-stage cascade design. By using a transformer circuit as its matching network, the LNA achieved a wideband performance. The LNA was designed in 45 nm CMOS SOI technology, achieving a maximum voltage gain of 20 dB and a maximum power gain of 23 dB with a 3dB bandwidth of 28–38 GHz, and a noise figure less than 3.8 dB in the band. At a supply voltage of 1.5V, the DC power consumption was only 20 mW.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/158027