Design of Broadband Low-Noise Amplifier in 45-nm SOI Technology
- Publisher:
- IEEE
- Publication Type:
- Conference Proceeding
- Citation:
- 2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT), 2021, 00, pp. 1-3
- Issue Date:
- 2021-10-25
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Design_of_Broadband_Low-Noise_Amplifier_in_45-nm_SOI_Technology.pdf | Published version | 2.07 MB |
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This paper presents a 28–38 GHz wideband low-noise amplifier (LNA) with minimum noise figure of 2.8 dB. The amplifier consists of a two-stage cascade design. By using a transformer circuit as its matching network, the LNA achieved a wideband performance. The LNA was designed in 45 nm CMOS SOI technology, achieving a maximum voltage gain of 20 dB and a maximum power gain of 23 dB with a 3dB bandwidth of 28–38 GHz, and a noise figure less than 3.8 dB in the band. At a supply voltage of 1.5V, the DC power consumption was only 20 mW.
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