A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology
- Publisher:
- IEEE
- Publication Type:
- Conference Proceeding
- Citation:
- 2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT), 2021, 00, pp. 1-3
- Issue Date:
- 2021-10-25
Closed Access
Filename | Description | Size | |||
---|---|---|---|---|---|
10.1515_9783035623611-006.pdf | Published version | 1.54 MB |
Copyright Clearance Process
- Recently Added
- In Progress
- Closed Access
This item is closed access and not available.
This paper presents a broadband millimeterwave (mm-wave) power amplifier (PA) in 45-nm SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an asymmetric magnetically-coupled resonator is implemented using a transformer-based structure, which effectively compensates the high-frequency gain of PA, and improves the gain flatness and bandwidth of PA. According to the simulation results, the 3-dB bandwidth of the PA is 11 GHz from 26 to 37 GHz. Besides, the PA achieves gain of 22.7 dB, PSAT of 20.8 dBm, and peak PAE of 34.3% at 32 GHz.
Please use this identifier to cite or link to this item: