A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology

Zhang, C; Guo, G; He, W; Zhu, X

A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology

Zhang, C Guo, G He, W Zhu, X

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Publisher:: IEEE
Publication Type:: Conference Proceeding
Citation:: 2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT), 2021, 00, pp. 1-3
Issue Date:: 2021-10-25

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Field	Value	Language
dc.contributor.author	Zhang, C
dc.contributor.author	Guo, G
dc.contributor.author	He, W
dc.contributor.author	Zhu, X https://orcid.org/0000-0002-5814-394X
dc.date	2021-09-13
dc.date.accessioned	2022-06-25T03:24:38Z
dc.date.available	2022-06-25T03:24:38Z
dc.date.issued	2021-10-25
dc.identifier.citation	2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT), 2021, 00, pp. 1-3
dc.identifier.isbn	978-1-6654-3853-7
dc.identifier.issn	2639-4545
dc.identifier.issn	2639-4537
dc.identifier.uri	http://hdl.handle.net/10453/158356
dc.description.abstract	This paper presents a broadband millimeterwave (mm-wave) power amplifier (PA) in 45-nm SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an asymmetric magnetically-coupled resonator is implemented using a transformer-based structure, which effectively compensates the high-frequency gain of PA, and improves the gain flatness and bandwidth of PA. According to the simulation results, the 3-dB bandwidth of the PA is 11 GHz from 26 to 37 GHz. Besides, the PA achieves gain of 22.7 dB, PSAT of 20.8 dBm, and peak PAE of 34.3% at 32 GHz.
dc.language	en
dc.publisher	IEEE
dc.relation	Department of Industry, Innovation and Science
dc.relation.ispartof	2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)
dc.relation.ispartof	UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies
dc.relation.isbasedon	10.1109/ucmmt53364.2021.9569923
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology
dc.type	Conference Proceeding
utslib.citation.volume	00
utslib.location.activity	Lancaster, United Kingdom
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - GBDTC - Global Big Data Technologies
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2022-06-25T03:24:37Z
pubs.finish-date	2021-09-15
pubs.place-of-publication	Piscataway, USA
pubs.publication-status	Published
pubs.start-date	2021-09-13
pubs.volume	00
dc.location	Piscataway, USA

Abstract:

This paper presents a broadband millimeterwave (mm-wave) power amplifier (PA) in 45-nm SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an asymmetric magnetically-coupled resonator is implemented using a transformer-based structure, which effectively compensates the high-frequency gain of PA, and improves the gain flatness and bandwidth of PA. According to the simulation results, the 3-dB bandwidth of the PA is 11 GHz from 26 to 37 GHz. Besides, the PA achieves gain of 22.7 dB, PSAT of 20.8 dBm, and peak PAE of 34.3% at 32 GHz.

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http://hdl.handle.net/10453/158356