A Flux-Controlled Logarithmic Memristor Model and Emulator

Xie, X; Zou, L; Wen, S; Zeng, Z; Huang, T

A Flux-Controlled Logarithmic Memristor Model and Emulator

Xie, X Zou, L Wen, S

Zeng, Z Huang, T

Permalink

Publisher:: SPRINGER BIRKHAUSER
Publication Type:: Journal Article
Citation:: Circuits, Systems, and Signal Processing, 2019, 38, (4), pp. 1452-1465
Issue Date:: 2019-04-15

Closed Access

	Filename	Description	Size
	Xie2019_Article_AFlux-ControlledLogarithmicMem.pdf	Published version	1.6 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Xie, X
dc.contributor.author	Zou, L
dc.contributor.author	Wen, S https://orcid.org/0000-0001-8077-7001
dc.contributor.author	Zeng, Z
dc.contributor.author	Huang, T
dc.date.accessioned	2022-07-19T00:40:38Z
dc.date.available	2022-07-19T00:40:38Z
dc.date.issued	2019-04-15
dc.identifier.citation	Circuits, Systems, and Signal Processing, 2019, 38, (4), pp. 1452-1465
dc.identifier.issn	0278-081X
dc.identifier.issn	1531-5878
dc.identifier.uri	http://hdl.handle.net/10453/159016
dc.description.abstract	The HP TiO2 model, as it is well known, is the most widely used physical model of memristor. However, deriving a mathematical model that fully characterizes the HP TiO2 memristor is a challenging task. As a result, simplified models such as the nonlinear quadratic model and the cubic memristor model are utilized in theoretic quantitative analysis of memristor circuits. These models result in unsatisfactory performance for many applications. To mitigate this problem, this paper proposes a new nonlinear logarithmic model to characterize memristor. Additionally, a memristor emulator circuit is developed. Finally, the relationships among the HP TiO2 memristor, the logarithmic model, and the emulator are thoroughly discussed.
dc.language	English
dc.publisher	SPRINGER BIRKHAUSER
dc.relation	National Natural Science Foundation of China61673187
dc.relation.ispartof	Circuits, Systems, and Signal Processing
dc.relation.isbasedon	10.1007/s00034-018-0926-1
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0102 Applied Mathematics, 0906 Electrical and Electronic Engineering
dc.subject.classification	Industrial Engineering & Automation
dc.title	A Flux-Controlled Logarithmic Memristor Model and Emulator
dc.type	Journal Article
utslib.citation.volume	38
utslib.for	0102 Applied Mathematics
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Strength - AAII - Australian Artificial Intelligence Institute
utslib.copyright.status	closed_access	*
dc.date.updated	2022-07-19T00:40:36Z
pubs.issue	4
pubs.publication-status	Published
pubs.volume	38
utslib.citation.issue	4

Abstract:

The HP TiO2 model, as it is well known, is the most widely used physical model of memristor. However, deriving a mathematical model that fully characterizes the HP TiO2 memristor is a challenging task. As a result, simplified models such as the nonlinear quadratic model and the cubic memristor model are utilized in theoretic quantitative analysis of memristor circuits. These models result in unsatisfactory performance for many applications. To mitigate this problem, this paper proposes a new nonlinear logarithmic model to characterize memristor. Additionally, a memristor emulator circuit is developed. Finally, the relationships among the HP TiO2 memristor, the logarithmic model, and the emulator are thoroughly discussed.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/159016