Iso-Trapping Measurement Technique for Characterization of Self-Heating in a GaN HEMT

Albahrani, SA; Parker, A; Heimlich, M; Schwitter, B

Iso-Trapping Measurement Technique for Characterization of Self-Heating in a GaN HEMT

Albahrani, SA Parker, A Heimlich, M Schwitter, B

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Publisher:: Institute of Electrical and Electronics Engineers
Publication Type:: Journal Article
Citation:: IEEE Transactions on Electron Devices, 2017, 64, (1), pp. 102-108
Issue Date:: 2017-01-01

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Field	Value	Language
dc.contributor.author	Albahrani, SA
dc.contributor.author	Parker, A
dc.contributor.author	Heimlich, M
dc.contributor.author	Schwitter, B https://orcid.org/0000-0003-3203-8639
dc.date.accessioned	2022-09-16T03:58:13Z
dc.date.available	2022-09-16T03:58:13Z
dc.date.issued	2017-01-01
dc.identifier.citation	IEEE Transactions on Electron Devices, 2017, 64, (1), pp. 102-108
dc.identifier.issn	0018-9383
dc.identifier.issn	1557-9646
dc.identifier.uri	http://hdl.handle.net/10453/161848
dc.description.abstract	The temperature response of field-effect transistors (FETs) to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very slow time constant. This affects intermodulation at high frequencies. A major difficulty in characterizing the self-heating process in microwave FETs is to differentiate between the self-heating and charge-trapping rates. An iso-trapping measurement technique is proposed by which it becomes possible to characterize the self-heating process in an FET in isolation from the effect of the charge-trapping process in the FET. The results of iso-trapping measurements performed on a GaN high-electron-mobility transistor are presented, and used to successfully characterize the self-heating process.
dc.language	English
dc.publisher	Institute of Electrical and Electronics Engineers
dc.relation.ispartof	IEEE Transactions on Electron Devices
dc.relation.isbasedon	10.1109/TED.2016.2628239
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0906 Electrical and Electronic Engineering
dc.subject.classification	Applied Physics
dc.title	Iso-Trapping Measurement Technique for Characterization of Self-Heating in a GaN HEMT
dc.type	Journal Article
utslib.citation.volume	64
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2022-09-16T03:58:11Z
pubs.issue	1
pubs.publication-status	Published
pubs.volume	64
utslib.citation.issue	1

Abstract:

The temperature response of field-effect transistors (FETs) to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very slow time constant. This affects intermodulation at high frequencies. A major difficulty in characterizing the self-heating process in microwave FETs is to differentiate between the self-heating and charge-trapping rates. An iso-trapping measurement technique is proposed by which it becomes possible to characterize the self-heating process in an FET in isolation from the effect of the charge-trapping process in the FET. The results of iso-trapping measurements performed on a GaN high-electron-mobility transistor are presented, and used to successfully characterize the self-heating process.

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http://hdl.handle.net/10453/161848